No. |
Part Name |
Description |
Manufacturer |
691 |
2N6055 |
8 A silicon N-P-N darlington power transistor. |
General Electric Solid State |
692 |
2N6056 |
8 A silicon N-P-N darlington power transistor. |
General Electric Solid State |
693 |
2N6057 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
694 |
2N6058 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
695 |
2N6059 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
696 |
2N6076 |
PNP silicon transistor. 25V, 100mA. |
General Electric Solid State |
697 |
2N6077 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
698 |
2N6078 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
699 |
2N6079 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
700 |
2N6093 |
75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode |
RCA Solid State |
701 |
2N6104 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
702 |
2N6104 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
703 |
2N6105 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
704 |
2N6105 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
705 |
2N6105 |
Hotspotting in RF Power Transistors - Application Note |
RCA Solid State |
706 |
2N6105 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
707 |
2N6106 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
708 |
2N6107 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
709 |
2N6108 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
710 |
2N6109 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
711 |
2N6110 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
712 |
2N6111 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
713 |
2N6121 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. |
General Electric Solid State |
714 |
2N6122 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
715 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
716 |
2N6124 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. |
General Electric Solid State |
717 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
718 |
2N6126 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
719 |
2N6188 |
100 V, 10 A high speed PNP transistor |
Solid State Devices Inc |
720 |
2N6189 |
100 V, 10 A high speed PNP transistor |
Solid State Devices Inc |
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