No. |
Part Name |
Description |
Manufacturer |
661 |
2N4431 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
662 |
2N5190 |
NPN SILICON TRANSISTOR GENERAL PURPOSE POWER |
Central Semiconductor |
663 |
2N5191 |
NPN SILICON TRANSISTOR GENERAL PURPOSE POWER |
Central Semiconductor |
664 |
2N5192 |
NPN SILICON TRANSISTOR GENERAL PURPOSE POWER |
Central Semiconductor |
665 |
2N5344 |
High voltage power PNP silicon transistor. 1 A, 250 V, 40 W. |
Motorola |
666 |
2N5655 |
Plastic NPN Silicon High-Voltage Power Transistor |
ON Semiconductor |
667 |
2N5655-D |
Plastic NPN Silicon High-Voltage Power Transistor |
ON Semiconductor |
668 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
669 |
2N5986 |
12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON |
Motorola |
670 |
2N5987 |
12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON |
Motorola |
671 |
2N5988 |
12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON |
Motorola |
672 |
2N5989 |
12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40,60,80 VOLTS 100 WATTS |
Motorola |
673 |
2N5989 |
12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON |
Motorola |
674 |
2N5991 |
12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON |
Motorola |
675 |
2N6049 |
4 AMPERE POWER TRANSISTOR PNP SILICON |
Motorola |
676 |
2N6233 |
4 AMPERE POWER TRANSISTOR PNP SILICON |
Motorola |
677 |
2N6235 |
4 AMPERE POWER TRANSISTOR PNP SILICON |
Motorola |
678 |
2N6266 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
679 |
2N6267 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
680 |
2N6420 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
681 |
2N6420 |
Complementary Medium-Power High Voltage Power Transistor 35W 1A |
Motorola |
682 |
2N6421 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
683 |
2N6421 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
684 |
2N6422 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
685 |
2N6422 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
686 |
2N6423 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
687 |
2N6423 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
688 |
2N669 |
PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications |
Motorola |
689 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
690 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
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