| No. |
Part Name |
Description |
Manufacturer |
| 691 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 692 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
| 693 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 694 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
| 695 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
| 696 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 697 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
| 698 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
| 699 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
| 700 |
2N6788 |
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. |
General Electric Solid State |
| 701 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
| 702 |
2N7227 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 400 Volt 0.315 Ohm |
Advanced Power Technology |
| 703 |
2N7228 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 500 Volt 0.415 Ohm |
Advanced Power Technology |
| 704 |
2NH45 |
FAST RECOVERY RECTIFIER (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 705 |
2NU41 |
SUPER FAST RECOVERY RECTIFIER (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 706 |
2SA1287 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 707 |
2SA1584 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 708 |
2SA1760 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 709 |
2SA1780 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 710 |
2SA1809 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 711 |
2SA1818 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 712 |
2SA1820 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 713 |
2SA1861 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 714 |
2SA1884 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 715 |
2SA1902 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 716 |
2SA1903 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 717 |
2SA1944 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 718 |
2SA2004 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 719 |
2SA2057 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 720 |
2SA2064 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
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