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Datasheets for L EL

Datasheets found :: 1771
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No. Part Name Description Manufacturer
661 2N6398 12A silicon controlled rectifier. Vrsom 650V. General Electric Solid State
662 2N6400 16A silicon controlled rectifier. Vrsom 75V. General Electric Solid State
663 2N6401 16A silicon controlled rectifier. Vrsom 125V. General Electric Solid State
664 2N6402 16A silicon controlled rectifier. Vrsom 250V. General Electric Solid State
665 2N6403 16A silicon controlled rectifier. Vrsom 450V. General Electric Solid State
666 2N6404 16A silicon controlled rectifier. Vrsom 650V. General Electric Solid State
667 2N6420 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
668 2N6421 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
669 2N6422 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
670 2N6423 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
671 2N6467 Silicon P-N-P medium-power transistor. -110V, 40W. General Electric Solid State
672 2N6468 Silicon P-N-P medium-power transistor. -130V, 40W. General Electric Solid State
673 2N6469 Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. General Electric Solid State
674 2N6473 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. General Electric Solid State
675 2N6474 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. General Electric Solid State
676 2N6475 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. General Electric Solid State
677 2N6476 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. General Electric Solid State
678 2N6477 MEDIUM POWER SILICON NPN TRANSISTORS General Electric Solid State
679 2N6478 MEDIUM POWER SILICON NPN TRANSISTORS General Electric Solid State
680 2N6486 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. General Electric Solid State
681 2N6487 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. General Electric Solid State
682 2N6488 15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. General Electric Solid State
683 2N6489 15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. General Electric Solid State
684 2N6490 15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. General Electric Solid State
685 2N6491 15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. General Electric Solid State
686 2N6496 High current, high power, high speed silicon N-P-N planar transistor. General Electric Solid State
687 2N6500 HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS General Electric Solid State
688 2N6500 HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS General Electric Solid State
689 2N6530 8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. General Electric Solid State
690 2N6531 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. General Electric Solid State


Datasheets found :: 1771
Page: | 19 | 20 | 21 | 22 | 23 | 24 | 25 | 26 | 27 |



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