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Datasheets for L EL

Datasheets found :: 1771
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No. Part Name Description Manufacturer
721 2N6753 5 A SwitchMax power transistor. High voltage N-P-N type. General Electric Solid State
722 2N6754 5 A SwitchMax power transistor. High voltage N-P-N type. General Electric Solid State
723 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
724 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
725 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
726 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
727 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
728 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
729 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
730 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
731 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
732 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
733 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
734 2N6788 N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. General Electric Solid State
735 2N6796 N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. General Electric Solid State
736 2N681 25A silicon controlled rectifier. Vrsom 35V. General Electric Solid State
737 2N682 25A silicon controlled rectifier. Vrsom 75V. General Electric Solid State
738 2N683 25A silicon controlled rectifier. Vrsom 150V. General Electric Solid State
739 2N684 25A silicon controlled rectifier. Vrsom 225V. General Electric Solid State
740 2N685 25A silicon controlled rectifier. Vrsom 300V. General Electric Solid State
741 2N686 25A silicon controlled rectifier. Vrsom 350V. General Electric Solid State
742 2N687 25A silicon controlled rectifier. Vrsom 400V. General Electric Solid State
743 2N688 25A silicon controlled rectifier. Vrsom 500V. General Electric Solid State
744 2N689 25A silicon controlled rectifier. Vrsom 600V. General Electric Solid State
745 2N690 25A silicon controlled rectifier. Vrsom 720V. General Electric Solid State
746 2N691 25A silicon controlled rectifier. Vrsom 840V. General Electric Solid State
747 2N692 25A silicon controlled rectifier. Vrsom 960V. General Electric Solid State
748 2N697 Silicon N-P-N planar transistor. General Electric Solid State
749 3N128 Silicon MOS Transistor General Electric Solid State
750 3N142 SILICON INSULATED GATE FIELD EFFECT TRANSISTOR General Electric Solid State


Datasheets found :: 1771
Page: | 21 | 22 | 23 | 24 | 25 | 26 | 27 | 28 | 29 |



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