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Datasheets for LAR TRA

Datasheets found :: 3023
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No. Part Name Description Manufacturer
661 2SD2653 Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) ROHM
662 2SD2653K Transistors > Small Signal Bipolar Transistors(up to 0.6W) ROHM
663 2SD2654 Transistors > Small Signal Bipolar Transistors(up to 0.6W) ROHM
664 2SD2656 Transistors > Small Signal Bipolar Transistors(up to 0.6W) ROHM
665 2SD2657 Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) ROHM
666 2SD2657K Transistors > Small Signal Bipolar Transistors(up to 0.6W) ROHM
667 2SD2672 Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) ROHM
668 2SD2673 Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) ROHM
669 2SD2674 Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) ROHM
670 2STA1695 High power PNP epitaxial planar bipolar transistor ST Microelectronics
671 2STA1943 High power PNP epitaxial planar bipolar transistor ST Microelectronics
672 2STC5242 High power NPN epitaxial planar bipolar transistor ST Microelectronics
673 2STN2540 Low voltage fast-switching PNP power bipolar transistor ST Microelectronics
674 30A01C PNP Bipolar Transistor for Audio Power Amplifier Applications ON Semiconductor
675 30A02CH Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single CPH3 ON Semiconductor
676 30A02MH Bipolar Transistor, -30V, -0.7A, Low VCE(sat) PNP Single MCPH3 ON Semiconductor
677 30C02CH Bipolar Transistor, 30V, 0.7A, Low VCE(sat) NPN Single CPH3 ON Semiconductor
678 3N3499 NPN silicon annular transistor high-voltage, low power Motorola
679 3N3763 Medium-current PNP silicon annular transistor Motorola
680 50A02CH Bipolar Transistor, -50V, -0.5A, Low VCE(sat) PNP Single CPH3 ON Semiconductor
681 50A02MH Bipolar Transistor, -50V, -0.5A, Low VCE(sat) PNP Single MCPH3 ON Semiconductor
682 50C02CH Bipolar Transistor, 50V, 0.5A, Low VCE(sat) NPN Single CPH3 ON Semiconductor
683 50C02MH Bipolar Transistor, 50V, 0.5A, Low VCE(sat) NPN Single MCPH3 ON Semiconductor
684 81406 28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band SGS Thomson Microelectronics
685 81410 28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band SGS Thomson Microelectronics
686 82223-12 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
687 82223-18 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
688 82223-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
689 82223-4 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
690 82324-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics


Datasheets found :: 3023
Page: | 19 | 20 | 21 | 22 | 23 | 24 | 25 | 26 | 27 |



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