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Datasheets for LAR TRA

Datasheets found :: 3023
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No. Part Name Description Manufacturer
691 82327-10 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
692 82327-15 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
693 82327-4 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
694 82327-6 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
695 AM0608-020 Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz SGS Thomson Microelectronics
696 AM0608-070 Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics SGS Thomson Microelectronics
697 AM82223-004 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
698 AM82223-012 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
699 AM82223-014 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
700 AM82223-018 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
701 AM82223-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
702 AM82324-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
703 AM82327-004 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
704 AM82327-006 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
705 AM82327-010 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
706 AM82327-015 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
707 AN-860 Application Note - Power MOSFETs versus BIPOLAR TRANSISTORS Motorola
708 AN1509 A VERY HIGH EFFICIENCY SILICON BIPOLAR TRANSISTOR SGS Thomson Microelectronics
709 APPLICATION NOTE 860 Power MOSFETs versus Bipolar Transistors Motorola
710 AT-30511 Low Current, High Performance NPN Silicon Bipolar Transistor Agilent (Hewlett-Packard)
711 AT-30511-BLK Low Current, High Performance NPN Silicon Bipolar Transistor Agilent (Hewlett-Packard)
712 AT-30511-TR1 Low Current, High Performance NPN Silicon Bipolar Transistor Agilent (Hewlett-Packard)
713 AT-30511BLK Low Current, High Performance NPN Silicon Bipolar Transistor Agilent (Hewlett-Packard)
714 AT-30511TR1 Low Current, High Performance NPN Silicon Bipolar Transistor Agilent (Hewlett-Packard)
715 AT-30533 Low Current, High Performance NPN Silicon Bipolar Transistor Agilent (Hewlett-Packard)
716 AT-30533-BLK Low Current, High Performance NPN Silicon Bipolar Transistor Agilent (Hewlett-Packard)
717 AT-30533-TR1 Low Current, High Performance NPN Silicon Bipolar Transistor Agilent (Hewlett-Packard)
718 AT-30533BLK Low Current, High Performance NPN Silicon Bipolar Transistor Agilent (Hewlett-Packard)
719 AT-30533TR1 Low Current, High Performance NPN Silicon Bipolar Transistor Agilent (Hewlett-Packard)
720 AT-31011 Low Current, High Performance NPN Silicon Bipolar Transistor Agilent (Hewlett-Packard)


Datasheets found :: 3023
Page: | 20 | 21 | 22 | 23 | 24 | 25 | 26 | 27 | 28 |



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