| No. |
Part Name |
Description |
Manufacturer |
| 6781 |
SD1895-03 |
1.6 GHz SATCOM APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 6782 |
SD1898 |
1.6 GHz SATCOM APPLICATIONS RF & MICROWAVE TRANSISTORS |
SGS Thomson Microelectronics |
| 6783 |
SD3300AD |
100 V, 0.6 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 6784 |
SD3300BD |
100 V, 0.6 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 6785 |
SD3300CHP |
100 V, 0.6 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 6786 |
SD3300HD |
100 V, 0.6 ohm, N-channel enhancement-mode D-MOS power FET |
Topaz Semiconductor |
| 6787 |
SE98APW |
DDR memory module temp sensor, 1.7 V to 3.6 V |
NXP Semiconductors |
| 6788 |
SE98ATP |
DDR memory module temp sensor, 1.7 V to 3.6 V |
NXP Semiconductors |
| 6789 |
SFS2326 |
200 V, 1.6 A silicon controled rectifier |
Solid State Devices Inc |
| 6790 |
SFS2327 |
250 V, 1.6 A silicon controled rectifier |
Solid State Devices Inc |
| 6791 |
SFS2328 |
300 V, 1.6 A silicon controled rectifier |
Solid State Devices Inc |
| 6792 |
SFS2329 |
400 V, 1.6 A silicon controled rectifier |
Solid State Devices Inc |
| 6793 |
SGA-4386 |
DC-4500 MHz, cascadable SiGe HBT MMIC amplifier. High gain: 14.6 dB at 1950 MHz |
Stanford Microdevices |
| 6794 |
SGA-6289 |
DC-4500 MHz, cascadable SiGe HBT MMIC amplifier. High gain: 12.6 dB at 1950 MHz |
Stanford Microdevices |
| 6795 |
SHE100 |
10000 V, 0.6 A high voltage standard recovery rectifier |
Solid State Devices Inc |
| 6796 |
SKY12236-11 |
High IIP3, 2.6 to 5.0 GHz Voltage-Controlled Variable Attenuator |
Skyworks Solutions |
| 6797 |
SKY13456 |
0.6 to 2.7 GHz DP14T Switch with MIPI® RFFE Interface |
Skyworks Solutions |
| 6798 |
SMBJ5913A |
1.5W silicon surface mount zener diode. Zener voltage 3.3 V. Test current 113.6 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 6799 |
SMBJ5913B |
1.5W silicon surface mount zener diode. Zener voltage 3.3 V. Test current 113.6 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 6800 |
SMBJ5913C |
1.5W silicon surface mount zener diode. Zener voltage 3.3 V. Test current 113.6 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 6801 |
SMBJ5913D |
1.5W silicon surface mount zener diode. Zener voltage 3.3 V. Test current 113.6 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 6802 |
SMBJ5914A |
1.5W silicon surface mount zener diode. Zener voltage 3.6 V. Test current 104.2 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 6803 |
SMBJ5914B |
1.5W silicon surface mount zener diode. Zener voltage 3.6 V. Test current 104.2 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 6804 |
SMBJ5914C |
1.5W silicon surface mount zener diode. Zener voltage 3.6 V. Test current 104.2 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 6805 |
SMBJ5914D |
1.5W silicon surface mount zener diode. Zener voltage 3.6 V. Test current 104.2 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 6806 |
SMBJ5919A |
1.5W silicon surface mount zener diode. Zener voltage 5.6 V. Test current 66.9 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 6807 |
SMBJ5919B |
1.5W silicon surface mount zener diode. Zener voltage 5.6 V. Test current 66.9 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 6808 |
SMBJ5919C |
1.5W silicon surface mount zener diode. Zener voltage 5.6 V. Test current 66.9 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 6809 |
SMBJ5919D |
1.5W silicon surface mount zener diode. Zener voltage 5.6 V. Test current 66.9 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 6810 |
SMBJ5934A |
1.5W silicon surface mount zener diode. Zener voltage 24 V. Test current 15.6 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
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