| No. |
Part Name |
Description |
Manufacturer |
| 6841 |
STD2NB80 |
N - CHANNEL 800V - 4.6 Ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 6842 |
STD2NB80 |
N-CHANNEL 800V - 4.6 OHM - 1.9A - IPAK/DPAK POWERMESH MOSFET |
ST Microelectronics |
| 6843 |
STD2NB80-1 |
N-CHANNEL 800V - 4.6 OHM - 1.9A - IPAK/DPAK POWERMESH MOSFET |
ST Microelectronics |
| 6844 |
STD2NB80T4 |
N-CHANNEL 800V - 4.6 OHM - 1.9A - IPAK/DPAK POWERMESH MOSFET |
ST Microelectronics |
| 6845 |
STD2NK70Z |
N-CHANNEL 700 V - 6 Ohm - 1.6 A DPAK/IPAK Zener-Protected SuperMESH MOSFET |
ST Microelectronics |
| 6846 |
STD2NK70Z-1 |
N-CHANNEL 700 V - 6 Ohm - 1.6 A DPAK/IPAK Zener-Protected SuperMESH MOSFET |
ST Microelectronics |
| 6847 |
STD2NK70ZT4 |
N-CHANNEL 700 V - 6 Ohm - 1.6 A DPAK/IPAK Zener-Protected SuperMESH MOSFET |
ST Microelectronics |
| 6848 |
STD3NM60N |
N-channel 600 V, 1.6 Ohm, 3.3 A MDmesh(TM) II Power MOSFET in DPAK package |
ST Microelectronics |
| 6849 |
STD4NK100Z |
N-channel 1000 V, 5.6 Ohm typ., 2.2 A Zener-protected SuperMESH(TM) Power MOSFET in DPAK package |
ST Microelectronics |
| 6850 |
STD5N20 |
N-CHANNEL 200V - 0.6 OHM - 5A - DPAK MESH OVERLAY MOSFET |
ST Microelectronics |
| 6851 |
STD5N20T4 |
N-CHANNEL 200V - 0.6 OHM - 5A - DPAK MESH OVERLAY MOSFET |
ST Microelectronics |
| 6852 |
STD9NM40N |
N-channel 400 V, 0.73 Ohm typ., 5.6 A MDmesh(TM) II Power MOSFET in a DPAK package |
ST Microelectronics |
| 6853 |
STE250N06 |
Length/Height 12.2 mm Width 25.4 mm Depth 38 mm Power dissipation 450 W Transistor polarity N Channel Centres fixing 31.6 mm Current Id cont. 250 A Current Idm pulse 750 A Voltage isolation 2.5 kV |
SGS Thomson Microelectronics |
| 6854 |
STEVAL-TDR004V1 |
400 W / 1.6 - 54 MHz reference design using 2x SD2933 |
ST Microelectronics |
| 6855 |
STF11N65M2 |
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220FP package |
ST Microelectronics |
| 6856 |
STF11N65M2(045Y) |
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP narrow leads package |
ST Microelectronics |
| 6857 |
STFI11N65M2 |
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in I2PAKFP package |
ST Microelectronics |
| 6858 |
STG4158 |
Low voltage 0.6 Ω typ single SPDT switch with break-before-make feature and 15 kV ESD protection |
ST Microelectronics |
| 6859 |
STG4158BJR |
Low voltage 0.6 Ω typ single SPDT switch with break-before-make feature and 15 kV ESD protection |
ST Microelectronics |
| 6860 |
STH10NC60FI |
N-CHANNEL 600V - 0.6 OHM - 10A - TO-247/ISOWATT218 POWERMESH MOSFET |
SGS Thomson Microelectronics |
| 6861 |
STH10NC60FI |
N-CHANNEL 600V - 0.6 OHM - 10A - TO-247/ISOWATT218 POWERMESH MOSFET |
ST Microelectronics |
| 6862 |
STH240N75F3-2 |
N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-2 package |
ST Microelectronics |
| 6863 |
STH240N75F3-6 |
N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-6 package |
ST Microelectronics |
| 6864 |
STH245N75F3-6 |
Automotive-grade N-channel 75 V, 2.6 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-6 package |
ST Microelectronics |
| 6865 |
STL50N25N3LLH5 |
Dual N-channel 30 V, 6 mOhm typ., 14.6 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 asymmetrical double island package |
ST Microelectronics |
| 6866 |
STL75N8LF6 |
N-channel 80 V, 5.6 mOhm, 18 A, PowerFLAT(TM) 5x6 STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
| 6867 |
STL7N80K5 |
N-channel 800 V, 0.95 Ohm typ., 3.6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in a PowerFLAT(TM) 5x6 VHV package |
ST Microelectronics |
| 6868 |
STP10NK70Z |
N-CHANNEL 700 V - 0.75 OHM - 8.6 A TO-220/TO-220FP ZENER-PROTECTED SUPERMESH POWER MOSFET |
ST Microelectronics |
| 6869 |
STP10NK70ZFP |
N-CHANNEL 700 V - 0.75 OHM - 8.6 A TO-220/TO-220FP ZENER-PROTECTED SUPERMESH POWER MOSFET |
ST Microelectronics |
| 6870 |
STP11N65M2 |
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package |
ST Microelectronics |
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