| No. |
Part Name |
Description |
Manufacturer |
| 6841 |
MAYS0750Y |
Silicon epitaxial planar type |
Panasonic |
| 6842 |
MAYS075GY |
Silicon epitaxial planar type |
Panasonic |
| 6843 |
MBV109T1 |
Silicon Epicap Diode |
Leshan Radio Company |
| 6844 |
MBV109T1-D |
Silicon Epicap Diodes |
ON Semiconductor |
| 6845 |
MC1550 |
RF-IF amplifier monolithic silicon epitaxial passivated |
Motorola |
| 6846 |
MC1550F |
RF-IF amplifier monolithic silicon epitaxial passivated |
Motorola |
| 6847 |
MC1550G |
RF-IF amplifier monolithic silicon epitaxial passivated |
Motorola |
| 6848 |
MC2831 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 6849 |
MC2832 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 6850 |
MC2833 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 6851 |
MC2834 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 6852 |
MC2835 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 6853 |
MC2836 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 6854 |
MC2837 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
| 6855 |
MC2838 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 6856 |
MC2839 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 85 V. |
Isahaya Electronics Corporation |
| 6857 |
MC2840 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 6858 |
MC2841 |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 6859 |
MC2844 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 6860 |
MC2845 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 6861 |
MC2846 |
Small signal diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 6862 |
MC2848 |
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 6863 |
MC2850 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 6864 |
MC2852 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 6865 |
MC2854 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 6866 |
MC961 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 6867 |
MC971 |
For High Speed Swiching Application Silicon Epitaxial Type(Common Cathode) |
Isahaya Electronics Corporation |
| 6868 |
MC981 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 6869 |
MC982 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 6870 |
MCL245 |
SILICON EPITAXIAL PLANAR DIODE |
Semtech |
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