| No. |
Part Name |
Description |
Manufacturer |
| 6931 |
MJE700 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 6932 |
MJE700 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 6933 |
MJE701 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 6934 |
MJE701 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 6935 |
MJE702 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 6936 |
MJE702 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 6937 |
MJE703 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 6938 |
MJE703 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 6939 |
MJE800 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 6940 |
MJE800 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 6941 |
MJE800 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 6942 |
MJE800STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 6943 |
MJE801 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 6944 |
MJE801 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 6945 |
MJE801 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 6946 |
MJE801STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 6947 |
MJE802 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 6948 |
MJE802 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 6949 |
MJE802 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 6950 |
MJE802STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 6951 |
MJE803 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 6952 |
MJE803 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
| 6953 |
MJE803 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 6954 |
MJE803STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
| 6955 |
MM2483 |
NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case |
Motorola |
| 6956 |
MM2484 |
NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case |
Motorola |
| 6957 |
MM3000 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 100V |
Motorola |
| 6958 |
MM3001 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 150V |
Motorola |
| 6959 |
MM3002 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 200V |
Motorola |
| 6960 |
MM3003 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 250V |
Motorola |
| | | |
