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Datasheets for ES,

Datasheets found :: 7365
Page: | 233 | 234 | 235 | 236 | 237 | 238 | 239 | 240 | 241 |
No. Part Name Description Manufacturer
7081 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7082 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7083 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7084 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7085 W536030P MDPCM Voice/Melody w/8Kx20 ROM, 896*4 RAM, 1Kx22 Notes, SPK/DAC, 8 I/O, 8 I Winbond Electronics
7086 W536060P MDPCM Voice/Melody w/8Kx20 ROM, 896*4 RAM, 1Kx22 Notes, SPK/DAC, 8 I/O, 8 I Winbond Electronics
7087 W536090P MDPCM Voice/Melody w/8Kx20 ROM, 896*4 RAM, 1Kx22 Notes, SPK/DAC, 8 I/O, 12 I, 12O Winbond Electronics
7088 W536120P MDPCM Voice/Melody w/8Kx20 ROM, 896*4 RAM, 1Kx22 Notes, SPK/DAC, 8 I/O, 12 I, 12O Winbond Electronics
7089 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7090 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7091 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7092 W6NRD0X-0000 Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7093 W6NRE0X-0000 Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7094 W6NRE0X-0000 Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7095 W6NRE0X-0000 Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7096 W6NRE0X-0000 Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7097 W6NXD0K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7098 W6NXD0K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7099 W6NXD0K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7100 W6NXD0K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7101 W6NXD0KLSR-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7102 W6NXD0KLSR-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7103 W6NXD0KLSR-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7104 W6NXD0KLSR-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7105 W6NXD3J-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7106 W6NXD3J-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7107 W6NXD3J-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7108 W6NXD3J-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7109 W6NXD3K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
7110 W6NXD3K-0000 Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER


Datasheets found :: 7365
Page: | 233 | 234 | 235 | 236 | 237 | 238 | 239 | 240 | 241 |



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