No. |
Part Name |
Description |
Manufacturer |
7111 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7112 |
W6NXD3K-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7113 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7114 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7115 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7116 |
W6NXD3L-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7117 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7118 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7119 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7120 |
W6PXD3O-0000 |
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
7121 |
X7R / X7S DIELECTRIC |
Multilayer Ceramic Chip Capacitors, Ideal for Decoupling and Filtering, General Purpose Dielectric, Excellent Aging Characteristics, Wide Range of Case Sizes, Voltage Ratings and Capacitance Values |
Vishay |
7122 |
X86-64 |
Advanced Micro Devices, Inc. x86-64TM Technology White Paper |
Advanced Micro Devices |
7123 |
XT36C |
Surface Mount Microprocessor Crystals 10.0MHz - 64.0MHz, Withstands Solder and Reflow Techniques, Slimline Profile, Tape and Reel (Standard 1000 Pieces) |
Vishay |
7124 |
Z1110A-G |
Zener Diodes, PD=1Watts, VZ=110V |
Comchip Technology |
7125 |
Z1120A-G |
Zener Diodes, PD=1Watts, VZ=120V |
Comchip Technology |
7126 |
Z1130A-G |
Zener Diodes, PD=1Watts, VZ=130V |
Comchip Technology |
7127 |
Z1150A-G |
Zener Diodes, PD=1Watts, VZ=150V |
Comchip Technology |
7128 |
Z1160A-G |
Zener Diodes, PD=1Watts, VZ=160V |
Comchip Technology |
7129 |
Z1180A-G |
Zener Diodes, PD=1Watts, VZ=180V |
Comchip Technology |
7130 |
Z1200A-G |
Zener Diodes, PD=1Watts, VZ=200V |
Comchip Technology |
7131 |
Z1220A-G |
Zener Diodes, PD=1Watts, VZ=220V |
Comchip Technology |
7132 |
Z1240A-G |
Zener Diodes, PD=1Watts, VZ=240V |
Comchip Technology |
7133 |
Z1250A-G |
Zener Diodes, PD=1Watts, VZ=250V |
Comchip Technology |
7134 |
Z1270A-G |
Zener Diodes, PD=1Watts, VZ=270V |
Comchip Technology |
7135 |
Z1300A-G |
Zener Diodes, PD=1Watts, VZ=300V |
Comchip Technology |
7136 |
Z1330A-G |
Zener Diodes, PD=1Watts, VZ=330V |
Comchip Technology |
7137 |
Z8673316PEC |
CMOS Z8 OTP microcontroller. ROM 8 Kbytes, RAM 237 bytes, I/O 24, speed 16 MHz, 4.5 V to 5.5 V |
Zilog |
7138 |
Z8673316PEC |
CMOS Z8 OTP microcontroller. ROM 8 Kbytes, RAM 237 bytes, I/O 24, speed 16 MHz, 4.5 V to 5.5 V |
Zilog |
7139 |
Z8673316PSC |
CMOS Z8 OTP microcontroller. ROM 8 Kbytes, RAM 237 bytes, I/O 24, speed 16 MHz, 3.5 V to 5.5 V |
Zilog |
7140 |
Z8673316PSC |
CMOS Z8 OTP microcontroller. ROM 8 Kbytes, RAM 237 bytes, I/O 24, speed 16 MHz, 3.5 V to 5.5 V |
Zilog |
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