| No. |
Part Name |
Description |
Manufacturer |
| 721 |
HM51S4800CJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 722 |
HM51S4800CJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 723 |
HM51S4800CJI-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 724 |
HM51S4800CJI-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 725 |
HM51S4800CLJ-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 726 |
HM51S4800CLJ-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 727 |
HM51S4800CLJ-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 728 |
HM51S4800CLJI-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 729 |
HM51S4800CLJI-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 730 |
HM51S4800CLTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 731 |
HM51S4800CLTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 732 |
HM51S4800CLTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 733 |
HM51S4800CTT-6 |
60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 734 |
HM51S4800CTT-7 |
70ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 735 |
HM51S4800CTT-8 |
80ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory |
Hitachi Semiconductor |
| 736 |
HM530281RTT-20 |
20ns; V(cc): -1.0 to +7.0V; 1W; ; 331,776-word x 8-bit flame memory |
Hitachi Semiconductor |
| 737 |
HM530281RTT-25 |
25ns; V(cc): -1.0 to +7.0V; 1W; ; 331,776-word x 8-bit flame memory |
Hitachi Semiconductor |
| 738 |
HM530281RTT-34 |
34ns; V(cc): -1.0 to +7.0V; 1W; ; 331,776-word x 8-bit flame memory |
Hitachi Semiconductor |
| 739 |
HM530281RTT-45 |
45ns; V(cc): -1.0 to +7.0V; 1W; ; 331,776-word x 8-bit flame memory |
Hitachi Semiconductor |
| 740 |
HM53051P-45 |
45ns; V(cc): -1.0 to +7.0V; 1W; 262,144-word x 4-bit frame memory |
Hitachi Semiconductor |
| 741 |
HM53051P-60 |
60ns; V(cc): -1.0 to +7.0V; 1W; 262,144-word x 4-bit frame memory |
Hitachi Semiconductor |
| 742 |
ICL7664ACJA |
500mW; V(in): -18V; programmable negative voltage regulator |
MAXIM - Dallas Semiconductor |
| 743 |
ICL7664ACPA |
500mW; V(in): -18V; programmable negative voltage regulator |
MAXIM - Dallas Semiconductor |
| 744 |
ICL7664ACSA |
500mW; V(in): -18V; programmable negative voltage regulator |
MAXIM - Dallas Semiconductor |
| 745 |
ICL7664ACTV |
300mW; V(in): -18V; programmable negative voltage regulator |
MAXIM - Dallas Semiconductor |
| 746 |
ICL7664AC_D |
V(in): -18V; programmable negative voltage regulator |
MAXIM - Dallas Semiconductor |
| 747 |
ICL7664CJA |
500mW; V(in): -18V; programmable negative voltage regulator |
MAXIM - Dallas Semiconductor |
| 748 |
ICL7664CPA |
500mW; V(in): -18V; programmable negative voltage regulator |
MAXIM - Dallas Semiconductor |
| 749 |
ICL7664CSA |
500mW; V(in): -18V; programmable negative voltage regulator |
MAXIM - Dallas Semiconductor |
| 750 |
ICL7664CTV |
300mW; V(in): -18V; programmable negative voltage regulator |
MAXIM - Dallas Semiconductor |
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