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Datasheets for -1

Datasheets found :: 1404
Page: | 24 | 25 | 26 | 27 | 28 | 29 | 30 | 31 | 32 |
No. Part Name Description Manufacturer
811 JANSR2N7403 22A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFET Intersil
812 JANSR2N7411 2.5A/ -100V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFET Intersil
813 KM44C256B-10 100ns; V(cc/in/out): -1.0 to 7.0V; 600mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode Samsung Electronic
814 KM44C256B-7 70ns; V(cc/in/out): -1.0 to 7.0V; 600mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode Samsung Electronic
815 KM44C256B-8 80ns; V(cc/in/out): -1.0 to 7.0V; 600mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode Samsung Electronic
816 KM44C256C-6 60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode Samsung Electronic
817 KM44C256C-7 70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode Samsung Electronic
818 KM44C256C-8 80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode Samsung Electronic
819 KM44C256CL-6 60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode Samsung Electronic
820 KM44C256CL-7 70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode Samsung Electronic
821 KM44C256CL-8 80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode Samsung Electronic
822 KM44C256CSL-6 60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode Samsung Electronic
823 KM44C256CSL-7 70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode Samsung Electronic
824 KM44C256CSL-8 80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode Samsung Electronic
825 KM44C256D-6 60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode Samsung Electronic
826 KM44C256D-7 60ns; V(cc/in/out): -1.0 to 7.0V; 358mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode Samsung Electronic
827 KM44C256D-8 60ns; V(cc/in/out): -1.0 to 7.0V; 330mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode Samsung Electronic
828 KM44C4104A-5 50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
829 KM44C4104A-6 60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
830 KM44C4104A-7 70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
831 KM44C4104A-8 80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
832 KM44C4104AL-5 50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
833 KM44C4104AL-6 60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
834 KM44C4104AL-7 70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
835 KM44C4104AL-8 80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
836 KM44C4104ALL-5 50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
837 KM44C4104ALL-6 60ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
838 KM44C4104ALL-7 70ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
839 KM44C4104ALL-8 80ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic
840 KM44C4104ASL-5 50ns; V(cc/in/out): -1 to +7V; 1W; 4M x 4 bit CMOS dynamic RAM with extended data out Samsung Electronic


Datasheets found :: 1404
Page: | 24 | 25 | 26 | 27 | 28 | 29 | 30 | 31 | 32 |



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