| No. |
Part Name |
Description |
Manufacturer |
| 721 |
2SD1415 |
7A; 30W; V(ceo): 100V; NPN darlington transistor |
TOSHIBA |
| 722 |
2SD1724 |
NPN Epitaxial Planar Silicon Transistors 100V/3A Switching Applications |
SANYO |
| 723 |
2SD1840 |
NPN Triple Diffused Planar Silicon Transistor 100V/4A Switching Applications |
SANYO |
| 724 |
2SD1841 |
NPN Triple Diffused Planar Silicon Transistor 100V/25A Switching Applications |
SANYO |
| 725 |
2SD1842 |
NPN Triple Diffused Planar Silicon Transistor 100V/40A Switching Applications |
SANYO |
| 726 |
2SD600 |
NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
| 727 |
2SD600K |
NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
| 728 |
2SD633P |
V(cbo): 100V; V(ceo): 85V; V(ebo): 6V; 6A; 60W; epitaxial planar silicon transistor. For 85V/6A, AF 35 to 45W output applications |
SANYO |
| 729 |
2SD896 |
NPN Triple Diffused Planar Silicon Transistor 100V/7A, AF 40W Output Applications |
SANYO |
| 730 |
2SK3707 |
N-Channel Power MOSFET, 100V, 20A, 60mOhm, TO-220F-3SG |
ON Semiconductor |
| 731 |
2SK3820 |
N-Channel Power MOSFET 100V 26A 60m Ohm TO-263-2L |
ON Semiconductor |
| 732 |
2SK612 |
V(dss): 100V; 20W; fast switching N-channel silicon power MOS FET. For industrial use |
NEC |
| 733 |
3.0SMCJ100 |
3000W voltage supressor, 100V |
MEI |
| 734 |
3.0SMCJ100A |
3000W voltage supressor, 100V |
MEI |
| 735 |
300U10A |
Diode Switching 100V 300A 2-Pin DO-9 |
New Jersey Semiconductor |
| 736 |
30CLJQ100 |
30A 100V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package |
International Rectifier |
| 737 |
30DF1 |
Diode Switching 100V 3A |
New Jersey Semiconductor |
| 738 |
30KP100 |
Diode TVS Single Uni-Dir 100V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 739 |
30KP100A |
Diode TVS Single Uni-Dir 100V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 740 |
30KP100C |
Diode TVS Single Bi-Dir 100V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 741 |
30KP100CA |
Diode TVS Single Bi-Dir 100V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 742 |
30KPA100A |
Diode TVS Single Uni-Dir 100V 30KW 2-Pin |
New Jersey Semiconductor |
| 743 |
30KPA100CA |
Diode TVS Single Bi-Dir 100V 30KW 2-Pin |
New Jersey Semiconductor |
| 744 |
30LJQ100SCS |
30A 100V Hi-Rel Schottky Discrete Diode in a SMD-0.5 package |
International Rectifier |
| 745 |
30S1 |
Diode Switching 100V 3A 2-Pin Case R |
New Jersey Semiconductor |
| 746 |
35CGQ100 |
35A 100V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package |
International Rectifier |
| 747 |
35CGQ100SCS |
35A 100V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package DLA Number 1N7062CCT1 |
International Rectifier |
| 748 |
35GQ100SCS |
35A 100V Hi-Rel Schottky Discrete Diode in a TO-254AA package DLA Number 1N7069T1 |
International Rectifier |
| 749 |
36MB10A |
Diode Rectifier Bridge Single 100V 35A 4-Pin D-34 |
New Jersey Semiconductor |
| 750 |
3B30L10 |
3A three phase rectifier bridge 100V |
Texas Instruments |
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