| No. |
Part Name |
Description |
Manufacturer |
| 811 |
85HFL10S02 |
Diode Switching 100V 85A 2-Pin DO-5 |
New Jersey Semiconductor |
| 812 |
85HFL10S05 |
Diode Switching 100V 85A 2-Pin DO-5 |
New Jersey Semiconductor |
| 813 |
85HFLR10S02 |
Diode Switching 100V 85A 2-Pin DO-5 |
New Jersey Semiconductor |
| 814 |
85HFLR10S05 |
Diode Switching 100V 85A 2-Pin DO-5 |
New Jersey Semiconductor |
| 815 |
85HFR10 |
Diode Switching 100V 85A 2-Pin DO-5 |
New Jersey Semiconductor |
| 816 |
8TQ100 |
Diode Schottky 100V 10A 2-Pin(2+Tab) TO-220AC |
New Jersey Semiconductor |
| 817 |
900PE10 |
V(rrm/drm): 100V; 1410A RMS hockey puk thyristor |
International Rectifier |
| 818 |
90CLQ100 |
90A 100V Hi-Rel Schottky Common Cathode Diode in a SMD-1 package |
International Rectifier |
| 819 |
90CLQ100 |
I(f)(av): 90 Amp; V(rrm): 100V; schottky rectifier |
TOSHIBA |
| 820 |
90CLQ100SCS |
90A 100V Hi-Rel Schottky Common Cathode Diode in a SMD-1 package |
International Rectifier |
| 821 |
APT10M07JVR |
POWER MOS V 100V 225A 0.007 Ohm |
Advanced Power Technology |
| 822 |
APT10M09B2VFR |
POWER MOS V 100V 100A 0.009 Ohm |
Advanced Power Technology |
| 823 |
APT10M09B2VR |
POWER MOS V 100V 100A 0.009 Ohm |
Advanced Power Technology |
| 824 |
APT10M09LVFR |
POWER MOS V 100V 100A 0.009 Ohm |
Advanced Power Technology |
| 825 |
APT10M09LVR |
POWER MOS V 100V 100A 0.009 Ohm |
Advanced Power Technology |
| 826 |
APT10M11B2VR |
POWER MOS V 100V 100A 0.011 Ohm |
Advanced Power Technology |
| 827 |
APT10M11JVR |
POWER MOS V 100V 144A 0.011 Ohm |
Advanced Power Technology |
| 828 |
APT10M11LVR |
POWER MOS V 100V 100A 0.011 Ohm |
Advanced Power Technology |
| 829 |
APT10M19BVFR |
POWER MOS V 100V 75A 0.019 Ohm |
Advanced Power Technology |
| 830 |
APT10M19BVR |
POWER MOS V 100V 75A 0.019 Ohm |
Advanced Power Technology |
| 831 |
APT10M19SVR |
POWER MOS V 100V 75A 0.019 Ohm |
Advanced Power Technology |
| 832 |
APT10M25BVFR |
POWER MOS V 100V 75A 0.025 Ohm |
Advanced Power Technology |
| 833 |
APT10M25BVR |
POWER MOS V 100V 75A 0.025 Ohm |
Advanced Power Technology |
| 834 |
APT10M25SVR |
POWER MOS V 100V 75A 0.025 Ohm |
Advanced Power Technology |
| 835 |
APT10M30AVR |
POWER MOS V 100V 65A 0.030 Ohm |
Advanced Power Technology |
| 836 |
AQV215 |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 100V, load current 320 mA. Tube packing style. |
Matsushita Electric Works(Nais) |
| 837 |
AQV215A |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 100V, load current 320 mA. Tube packing style. |
Matsushita Electric Works(Nais) |
| 838 |
AQV215AX |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 100V, load current 320 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 839 |
AQV215AZ |
PhotoMOS relay, GU (general use) type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 100V, load current 320 mA. Tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
| 840 |
AQV215SX |
PhotoMOS relay, GU (general use) type [1-channel (form A ) type]. Output rating: load voltage 100V, load current 300 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
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