| No. |
Part Name |
Description |
Manufacturer |
| 901 |
BC449B |
V(ceo): 100V; V(cbo): 100V; V(ebo): 5V; voltage NPN silicon transistor |
Motorola |
| 902 |
BC450 |
0.625W General Purpose PNP Plastic Leaded Transistor. 100V Vceo, 0.300A Ic, 50 - 220 hFE |
Continental Device India Limited |
| 903 |
BC450A |
0.625W General Purpose PNP Plastic Leaded Transistor. 100V Vceo, 0.300A Ic, 120 - 220 hFE |
Continental Device India Limited |
| 904 |
BC846AS |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 905 |
BC846AS-7 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 906 |
BC856AS |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 907 |
BC856AS-7 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
| 908 |
BCX39 |
Trans GP BJT PNP 100V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 909 |
BD140C |
2A Complementary silicon plastic 30W power PNP transistor 100V |
Motorola |
| 910 |
BD239C |
30.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE. |
Continental Device India Limited |
| 911 |
BD239C |
2A Complementary silicon plastic 30W power NPN transistor 100V |
Motorola |
| 912 |
BD239C |
Trans GP BJT NPN 100V 2A 3-Pin(3+Tab) TO-220AB Bulk |
New Jersey Semiconductor |
| 913 |
BD240C |
30.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 15 hFE. |
Continental Device India Limited |
| 914 |
BD240CBP |
30.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 2.000A Ic, 40 hFE. |
Continental Device India Limited |
| 915 |
BD241C |
Trans GP BJT NPN 100V 3A 3-Pin(3+Tab) TO-220 Tube |
New Jersey Semiconductor |
| 916 |
BD241C |
Power 3A 100V NPN 40W |
ON Semiconductor |
| 917 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 918 |
BD242C |
Trans GP BJT PNP 100V 3A 3-Pin(3+Tab) TO-220AB Rail |
New Jersey Semiconductor |
| 919 |
BD242C |
Power 3A 100V PNP |
ON Semiconductor |
| 920 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 921 |
BD242D |
Trans GP BJT PNP 100V 3A 3-Pin(3+Tab) TO-220AB Rail |
New Jersey Semiconductor |
| 922 |
BD242U |
Trans GP BJT PNP 100V 3A 3-Pin(3+Tab) TO-220AB Rail |
New Jersey Semiconductor |
| 923 |
BD243C |
65.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 6.000A Ic, 15 hFE. |
Continental Device India Limited |
| 924 |
BD243C |
Power 6A 100V NPN |
ON Semiconductor |
| 925 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 926 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 927 |
BD244C |
65.000W Medium Power PNP Plastic Leaded Transistor. 100V Vceo, 6.000A Ic, 15 hFE. |
Continental Device India Limited |
| 928 |
BD244C |
Power 6A 100V PNP |
ON Semiconductor |
| 929 |
BD244C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 930 |
BD244C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
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