No. |
Part Name |
Description |
Manufacturer |
721 |
1825GXXX |
High Voltage MLC Chip |
AVX Corporation |
722 |
1825HXXX |
High Voltage MLC Chip |
AVX Corporation |
723 |
1825JAXXX |
High Voltage MLC Chip |
AVX Corporation |
724 |
1825JXXX |
High Voltage MLC Chip |
AVX Corporation |
725 |
1825KXXX |
High Voltage MLC Chip |
AVX Corporation |
726 |
1825SXXX |
High Voltage MLC Chip |
AVX Corporation |
727 |
1825WXXX |
High Voltage MLC Chip |
AVX Corporation |
728 |
1825XXX |
High Voltage MLC Chip |
AVX Corporation |
729 |
194D |
Solid Tantalum Chip Capacitors, Conformal, High Reliability, MIDGET® Solid-Electrolyte, New Extended Range, Minimum Size |
Vishay |
730 |
195D |
Solid Tantalum Chip Capacitors, Conformal, Industrial Grade, TANTAMOUNT® Tantalum Chips with Conformal Terminals, Minimum size, Meets IEC Specification QC300801/US0002, 2 Standard Electroplate Terminations |
Vishay |
731 |
195D |
Solid Tantalum Chip Capacitors, Conformal, Industrial Grade, TANTAMOUNT® Tantalum Chips with Conformal Terminals, Minimum size, Meets IEC Specification QC300801/US0002, 2 Standard Electroplate Terminations |
Vishay |
732 |
19RFDCS910 |
CONTACTLESS READER CHIP SET WITH ST92163MCU |
SGS Thomson Microelectronics |
733 |
19RFDCS910 |
CONTACTLESS READER CHIP SET WITH ST92163MCU |
ST Microelectronics |
734 |
19RFDCSD10 |
CONTACTLESS READER CHIP SET |
ST Microelectronics |
735 |
1AS027 |
Silicon rectifier with avalanche character 1.5A 800V, approved under CV7645 for MIL applications |
Texas Instruments |
736 |
1AS029 |
Silicon rectifier with avalanche character 1.5A 1000V, approved under CV7645 for MIL applications |
Texas Instruments |
737 |
1MBH03D-120 |
Ratings and characterisitcs Fuji IGBT |
Fuji Electric |
738 |
1MBH05D-060 |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
739 |
1MBH05D-120 |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
740 |
1MBH08D-120 |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
741 |
1MBH10D-060 |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
742 |
1MBH10D-120 |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
743 |
1MBH15D-060 |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
744 |
1MBH50D-060S |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
745 |
1MBH75D-060 |
Ratings and characteristics of Fuji IGBT�� |
Fuji Electric |
746 |
1MBH75D-060S |
Ratings and characteristics of Fuji IGBT |
Fuji Electric |
747 |
1MBI400NB-060 |
Ratings and characteristics of Fuji IGBT Module |
Fuji Electric |
748 |
1N3154 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.130 V. 500 W. |
Motorola |
749 |
1N3154A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.172 V. 500 W. |
Motorola |
750 |
1N3155 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.065 V. 500 W. |
Motorola |
| | | |