No. |
Part Name |
Description |
Manufacturer |
751 |
1N3155A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.086 V. 500 W. |
Motorola |
752 |
1N3156 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.026 V. 500 W. |
Motorola |
753 |
1N3156A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.034 V. 500 W. |
Motorola |
754 |
1N3157 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.013 V. 500 W. |
Motorola |
755 |
1N3157A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.017 V. 500 W. |
Motorola |
756 |
1N5518 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
757 |
1N5518B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
758 |
1N5518B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
759 |
1N5519B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
760 |
1N5519B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
761 |
1N5520B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
762 |
1N5520B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
763 |
1N5521B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
764 |
1N5521B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
765 |
1N5522B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
766 |
1N5522B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
767 |
1N5523B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
768 |
1N5523B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
769 |
1N5524B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
770 |
1N5524B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
771 |
1N5525B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
772 |
1N5525B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
773 |
1N5526B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
774 |
1N5526B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
775 |
1N5527B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
776 |
1N5527B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
777 |
1N5528B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
778 |
1N5528B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
779 |
1N5529B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
780 |
1N5529B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
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