| No. |
Part Name |
Description |
Manufacturer |
| 721 |
MAX853CSA+ |
Low-Noise, Regulated, Negative Charge Pump Power Supplies for GaAsFET Bias |
MAXIM - Dallas Semiconductor |
| 722 |
MAX853ESA |
Low-Noise / Regulated / Negative Charge-Pump Power Supplies for GaAsFET Bias |
MAXIM - Dallas Semiconductor |
| 723 |
MAX853ESA+ |
Low-Noise, Regulated, Negative Charge Pump Power Supplies for GaAsFET Bias |
MAXIM - Dallas Semiconductor |
| 724 |
MAX853ESA+T |
Low-Noise, Regulated, Negative Charge Pump Power Supplies for GaAsFET Bias |
MAXIM - Dallas Semiconductor |
| 725 |
MAX853ISA |
Low-Noise / Regulated / Negative Charge-Pump Power Supplies for GaAsFET Bias |
MAXIM - Dallas Semiconductor |
| 726 |
MAX853ISA+ |
Low-Noise, Regulated, Negative Charge Pump Power Supplies for GaAsFET Bias |
MAXIM - Dallas Semiconductor |
| 727 |
MAX881 |
Low-Noise Bias Supply in MAX with Power-OK for GaAsFET PA |
MAXIM - Dallas Semiconductor |
| 728 |
MAX881R |
Low-Noise Bias Supply in µMAX with Power OK for GaAsFET PA |
MAXIM - Dallas Semiconductor |
| 729 |
MAX881REUB |
Low-Noise Bias Supply in MAX with Power-OK for GaAsFET PA |
MAXIM - Dallas Semiconductor |
| 730 |
MAX881REUB+ |
Low-Noise Bias Supply in µMAX with Power OK for GaAsFET PA |
MAXIM - Dallas Semiconductor |
| 731 |
MAX881REUB+T |
Low-Noise Bias Supply in µMAX with Power OK for GaAsFET PA |
MAXIM - Dallas Semiconductor |
| 732 |
MAX881REUB-T |
Low-Noise Bias Supply in µMAX with Power OK for GaAsFET PA |
MAXIM - Dallas Semiconductor |
| 733 |
MB3891 |
Power Management IC for GSM Mobile Phone |
Fujitsu Microelectronics |
| 734 |
MB3891PFV |
Power Management IC for GSM Mobile Phone |
Fujitsu Microelectronics |
| 735 |
MC1455P1 |
Highly stable 555 timer for generating accurate time delays and oscillation 8-PDIP 0 to 70 |
Texas Instruments |
| 736 |
MC2835 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 737 |
MC2836 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 75 V. |
Isahaya Electronics Corporation |
| 738 |
MC2840 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 739 |
MC2850 |
Small signal diode. For general switching application. Silicon epitaxial type. Peak reverse voltage 35 V. |
Isahaya Electronics Corporation |
| 740 |
MCH3315 |
P-Channel MOSFET for General Purpose Switching Applications |
ON Semiconductor |
| 741 |
MCH3316 |
P-Channel MOSFET for General Purpose Switching Applications |
ON Semiconductor |
| 742 |
MCH3322 |
P-Channel MOSFET for General Purpose Switching Applications |
ON Semiconductor |
| 743 |
MCH3414 |
N-Channel MOSFET for General Purpose Switching Applications |
ON Semiconductor |
| 744 |
MCH3421 |
N-Channel MOSFET for General Purpose Switching Applications |
ON Semiconductor |
| 745 |
MCH6627 |
Integrated P- and N-Channel MOSFETs for General Purpose Switching Applications |
ON Semiconductor |
| 746 |
MF1012S-1 |
FOR GPS SYSTEM |
Mitsubishi Electric Corporation |
| 747 |
MF1042S-1 |
FOR GSM MOBILE TELEPHONE, Tx |
Mitsubishi Electric Corporation |
| 748 |
MF1043S-1 |
FOR GSM MOBILE TELEPHONE, Rx |
Mitsubishi Electric Corporation |
| 749 |
MF1172V-1 |
FOR GSM MOBILE TELEPHONE, Rx |
Mitsubishi Electric Corporation |
| 750 |
MF1173V-1 |
FOR GSM MOBILE TELEPHONE, Tx |
Mitsubishi Electric Corporation |
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