| No. |
Part Name |
Description |
Manufacturer |
| 751 |
MJ2267 |
Silicon PNP power transistor, these devices can be directly substituted for germanium types |
Motorola |
| 752 |
MJ2268 |
Silicon PNP power transistor, these devices can be directly substituted for germanium types |
Motorola |
| 753 |
MJ2955 |
PNP High power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc Ic = 15Adc, PD = 115W. |
USHA India LTD |
| 754 |
MJD122-1 |
NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A |
Fairchild Semiconductor |
| 755 |
MJD122T4 |
NPN transistor, for general purpose amplifier and low speed switching applications, 100V, 8A |
Fairchild Semiconductor |
| 756 |
MJD127T4 |
PNP transistor, for general purpose amplifier and low speed switching applications, 100V, 8A |
Fairchild Semiconductor |
| 757 |
MJE2955T |
PNP, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc Ic = 10Adc, PD = 75W. |
USHA India LTD |
| 758 |
MJE3055T |
NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. |
USHA India LTD |
| 759 |
MM3000 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 100V |
Motorola |
| 760 |
MM3001 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 150V |
Motorola |
| 761 |
MM3002 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 200V |
Motorola |
| 762 |
MM3003 |
NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 250V |
Motorola |
| 763 |
MMBD4448HADW-7 |
100V; 500mA surface mount fast switching diode. For general purpose swithcing applications |
Diodes |
| 764 |
MMBD4448HAQW-7 |
100V; 500mA surface mount fast switching diode. For general purpose swithcing applications |
Diodes |
| 765 |
MMBD4448HCDW-7 |
100V; 500mA surface mount fast switching diode. For general purpose swithcing applications |
Diodes |
| 766 |
MMBD4448HCQW-7 |
100V; 500mA surface mount fast switching diode. For general purpose swithcing applications |
Diodes |
| 767 |
MMBD4448HSDW-7 |
100V; 500mA surface mount fast switching diode. For general purpose swithcing applications |
Diodes |
| 768 |
MMBD4448HTW-7 |
100V; 500mA surface mount fast switching diode. For general purpose swithcing applications |
Diodes |
| 769 |
MMD6050 |
Silicon epitaxial micro-miniature switching diodes - single, series and dual diodes designed for general-purpose, high-speed switching applications |
Motorola |
| 770 |
MMD6100 |
Silicon epitaxial micro-miniature switching diodes - single, series and dual diodes designed for general-purpose, high-speed switching applications |
Motorola |
| 771 |
MMD6150 |
Silicon epitaxial micro-miniature switching diodes - single, series and dual diodes designed for general-purpose, high-speed switching applications |
Motorola |
| 772 |
MMD7000 |
Silicon epitaxial micro-miniature switching diodes - single, series and dual diodes designed for general-purpose, high-speed switching applications |
Motorola |
| 773 |
MPS3693 |
NPN silicon annular transistor designed for general purpose RF amplifier, well suited for use in AM/FM receivers |
Motorola |
| 774 |
MPS3694 |
NPN silicon annular transistor designed for general purpose RF amplifier, well suited for use in AM/FM receivers |
Motorola |
| 775 |
MSC81406 |
28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band |
SGS Thomson Microelectronics |
| 776 |
MUX16BTC_883 |
36V; 25mA; 16-channel/dual 8-chan JFET analog multiplexer. For geometry correction in high-resolution CRT displays |
Analog Devices |
| 777 |
MUX28BTC_883 |
36V; 25mA; 16-channel/dual 8-chan JFET analog multiplexer. For geometry correction in high-resolution CRT displays |
Analog Devices |
| 778 |
MX98728EC |
GMAC SINGLE CHIP 10/100 FAST ETHERNET CONTROLLER FOR GENERIC APPLICATION |
Macronix International |
| 779 |
NE5510279A-T1 |
3.5 V operation silicon RF power MOSFET for GSM1800 transmission amplifiers. |
NEC |
| 780 |
NE555V |
Highly stable 555 timer for generating accurate time delays and oscillation 8-PDIP 0 to 70 |
Texas Instruments |
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