| No. |
Part Name |
Description |
Manufacturer |
| 721 |
2N5623 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 722 |
2N5632 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 723 |
2N5633 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 724 |
2N5633 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 725 |
2N5663 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 726 |
2N5665 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 727 |
2N5675 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 728 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 729 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 730 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 731 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 732 |
2N5743 |
Bipolar PNP Device in a Hermetically sealed TO66 Metal Package |
SemeLAB |
| 733 |
2N5758 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 734 |
2N5759 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 735 |
2N5781 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 736 |
2N5864 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. |
SemeLAB |
| 737 |
2N5867 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 738 |
2N5870 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 739 |
2N5871 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 740 |
2N5871 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 741 |
2N5871/1 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 742 |
2N5871/2 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 743 |
2N5872 |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 744 |
2N5872 |
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 745 |
2N5872A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 746 |
2N5872B |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 747 |
2N5873 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 748 |
2N5873 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 749 |
2N5873/1 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
| 750 |
2N5873/2 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
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