| No. |
Part Name |
Description |
Manufacturer |
| 811 |
2N6655/3 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 812 |
2N6655/4 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 813 |
2N6655A |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 814 |
2N6655B |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
| 815 |
2N6687 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
SemeLAB |
| 816 |
2N6786 |
N-Channel MOSFET in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 817 |
2N697 |
0.600W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 818 |
2N698 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
| 819 |
2N699 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 820 |
2N706 |
Silicon low-current fast switching NPN transistor - metal case |
IPRS Baneasa |
| 821 |
2N706A |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 822 |
2N708 |
0.360W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.200A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 823 |
2N708 |
Silicon low-current fast switching NPN transistor - metal case |
IPRS Baneasa |
| 824 |
2N718A |
0.500W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 825 |
2N720A |
0.500W Switching NPN Metal Can Transistor. 80V Vceo, A Ic, 20 hFE. |
Continental Device India Limited |
| 826 |
2N722 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 827 |
2N869 |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 828 |
2N915 |
0.360W General Purpose NPN Metal Can Transistor. 50V Vceo, A Ic, 50 - 200 hFE. |
Continental Device India Limited |
| 829 |
2N917 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 - 200 hFE. |
Continental Device India Limited |
| 830 |
2N918 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 hFE. |
Continental Device India Limited |
| 831 |
2N929 |
Silicon low power general purpose NPN transistor - metal case |
IPRS Baneasa |
| 832 |
2N929 |
Bipolar NPN Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 833 |
2N930 |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, - 600 hFE. |
Continental Device India Limited |
| 834 |
2N930 |
Silicon low power general purpose NPN transistor - metal case |
IPRS Baneasa |
| 835 |
2N930A |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, 100 - 600 hFE. |
Continental Device India Limited |
| 836 |
2N987 |
PNP Germanium VHF Diffused Transistor in TO72 metal case |
Newmarket Transistors NKT |
| 837 |
2N995 |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 838 |
2S304A |
Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. |
SemeLAB |
| 839 |
2V010 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 18 V @ 1mA DC test current. |
NTE Electronics |
| 840 |
2V014 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 22 V @ 1mA DC test current. |
NTE Electronics |
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