| No. |
Part Name |
Description |
Manufacturer |
| 7291 |
2SC1968A |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 7292 |
2SC1969 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 7293 |
2SC1970 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 7294 |
2SC1971 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 7295 |
2SC1972 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
Mitsubishi Electric Corporation |
| 7296 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 7297 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 7298 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 7299 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 7300 |
2SC2025 |
NPN medium power UHF-VHF transistor (This datasheet of NE416 series is also the datasheet of 2SC2025, see the Electrical Characteristics table) |
NEC |
| 7301 |
2SC2028 |
FUJITSU TRANSISTOR |
Fujitsu Microelectronics |
| 7302 |
2SC2028/2 |
FUJITSU TRANSISTOR |
Fujitsu Microelectronics |
| 7303 |
2SC2043 |
2SC2043 |
Fuji Electric |
| 7304 |
2SC2053 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 7305 |
2SC2055 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 7306 |
2SC2056 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 7307 |
2SC2086 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 7308 |
2SC2094 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 7309 |
2SC2097 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
| 7310 |
2SC2131 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 7311 |
2SC2133 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 7312 |
2SC2134 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 7313 |
2SC2150 |
NPN silicon microwave transistor (This datasheet of NE57835 is also the datasheet of 2SC2150, see the Electrical Characteristics table) |
NEC |
| 7314 |
2SC2166 |
NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR) |
Mitsubishi Electric Corporation |
| 7315 |
2SC2194A |
Silicon NPN epitaxial power transistor, suitable for TV Sound Output, vert. deflection output, complementary to 2SA962A |
TOSHIBA |
| 7316 |
2SC2217 |
NPN silicon High Frequency Transistor (This datasheet NE21903 is also the datasheet of 2SC2217, see the Electrical Characteristics table) |
NEC |
| 7317 |
2SC2233 |
NPN SILICON POWER TRANSISTOR(for TV horizontal deflection output applications) |
MOSPEC Semiconductor |
| 7318 |
2SC2233 |
Silicon NPN triple diffused transistor, TV horizontal deflection output applications |
TOSHIBA |
| 7319 |
2SC2233 |
NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. |
USHA India LTD |
| 7320 |
2SC2237 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| | | |
