| No. |
Part Name |
Description |
Manufacturer |
| 7411 |
2SC3053 |
150mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. correspond 2SC710 |
Isahaya Electronics Corporation |
| 7412 |
2SC3055 |
Silicon High Speed Power NPN Transistor |
Fujitsu Microelectronics |
| 7413 |
2SC3056 |
Silicon High Speed Power NPN Transistor |
Fujitsu Microelectronics |
| 7414 |
2SC3056A |
Silicon High Speed Power NPN Transistor |
Fujitsu Microelectronics |
| 7415 |
2SC3057 |
Silicon High Speed Power NPN Transistor |
Fujitsu Microelectronics |
| 7416 |
2SC3058 |
Silicon High Speed Power NPN Transistor |
Fujitsu Microelectronics |
| 7417 |
2SC3058A |
Silicon High Speed Power NPN Transistor |
Fujitsu Microelectronics |
| 7418 |
2SC3059 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
| 7419 |
2SC3060 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
| 7420 |
2SC3061 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
| 7421 |
2SC3101 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 7422 |
2SC3102 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 7423 |
2SC3103 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 7424 |
2SC3104 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 7425 |
2SC3105 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 7426 |
2SC3133 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 7427 |
2SC3139 |
CLASS A, 860MHz 24V power transistor (This datasheet of NEL080120-28 is also the datasheet of 2SC3139, see the Electrical Characteristics table) |
NEC |
| 7428 |
2SC3140 |
CLASS A, 860MHz 24V power transistor (This datasheet of NEL080220-28 is also the datasheet of 2SC3140, see the Electrical Characteristics table) |
NEC |
| 7429 |
2SC3141 |
CLASS A, 860MHz 24V power transistor (This datasheet of NEL080525-28 is also the datasheet of 2SC3141, see the Electrical Characteristics table) |
NEC |
| 7430 |
2SC3176 |
CRT Horizontal Deflection Output Applications (with Damper Diode) |
SANYO |
| 7431 |
2SC3178 |
Silicon High Speed Power Transistor |
Fujitsu Microelectronics |
| 7432 |
2SC3189 |
CRT Display Gorizontal Deflection Output Applications |
SANYO |
| 7433 |
2SC3198 |
Transistors |
Korea Electronics (KEC) |
| 7434 |
2SC3198L |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 7435 |
2SC3200 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 7436 |
2SC3201 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 7437 |
2SC3202 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 7438 |
2SC3202 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 7439 |
2SC3203 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 7440 |
2SC3206 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| | | |
