No. |
Part Name |
Description |
Manufacturer |
751 |
2N3905 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
752 |
2N3906 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
753 |
2N3906 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
754 |
2N3906 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
755 |
2N3906 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
756 |
2N3906 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
757 |
2N3924 |
Silicon Planar Epitaxial Overlay Transistor |
Philips |
758 |
2N3924 |
Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage |
VALVO |
759 |
2N3926 |
Silicon Planar Epitaxial Overlay Transistor |
Philips |
760 |
2N3926 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
761 |
2N3927 |
Silicon Planar Epitaxial Overlay Transistor |
Philips |
762 |
2N3927 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
763 |
2N4013 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
764 |
2N4014 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
765 |
2N4030 |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
766 |
2N4031 |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
767 |
2N4032 |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
768 |
2N4033 |
Silicon PNP Epitaxial Planar Transistor |
AEG-TELEFUNKEN |
769 |
2N4033 |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
770 |
2N4036 |
Silicon PNP Epitaxial Planar Transistor |
AEG-TELEFUNKEN |
771 |
2N4123 |
Planar epitaxial passivated NPN silicon transistor. 30V, 200mA. |
General Electric Solid State |
772 |
2N4123 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
773 |
2N4123 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
774 |
2N4123 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
775 |
2N4124 |
Planar epitaxial passivated NPN silicon transistor. 25V, 200mA. |
General Electric Solid State |
776 |
2N4124 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
777 |
2N4124 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
778 |
2N4124 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
779 |
2N4125 |
Planar epitaxial passivated PNP silicon transistor. -30V, 200mA. |
General Electric Solid State |
780 |
2N4125 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| | | |