No. |
Part Name |
Description |
Manufacturer |
781 |
2N4911X |
NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE |
SemeLAB |
782 |
2N4912X |
NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE |
SemeLAB |
783 |
2N4923 |
NPN SILICON EPITAXIAL TRANSISTOR |
Boca Semiconductor Corporation |
784 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
785 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
786 |
2N4953 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
787 |
2N4957 |
Silicon PNP Epitaxial Planar HF Transistor |
IPRS Baneasa |
788 |
2N4958 |
Silicon PNP Epitaxial Planar HF Transistor |
IPRS Baneasa |
789 |
2N4959 |
Silicon PNP Epitaxial Planar HF Transistor |
IPRS Baneasa |
790 |
2N5010 |
SILICON EPITAXIAL NPN TRANSISTOR |
SemeLAB |
791 |
2N5014 |
SILICON EPITAXIAL NPN TRANSISTOR |
SemeLAB |
792 |
2N5086 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
793 |
2N5089 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
794 |
2N5109 |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
795 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
796 |
2N5109A |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
797 |
2N5109B |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
798 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
799 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
800 |
2N5180 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
801 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
802 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
803 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
804 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
805 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
806 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
807 |
2N5202 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
808 |
2N5210 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
809 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
810 |
2N5232A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
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