No. |
Part Name |
Description |
Manufacturer |
901 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
902 |
2N5195 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
903 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
904 |
2N5202 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
905 |
2N5210 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
906 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
907 |
2N5232A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
908 |
2N5249 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
909 |
2N5249A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
910 |
2N5306 |
Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. |
General Electric Solid State |
911 |
2N5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
912 |
2N5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
913 |
2N5308A |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
914 |
2N5336 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
915 |
2N5337 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
916 |
2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE |
SemeLAB |
917 |
2N5338 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
918 |
2N5339 |
Silicon epitaxial planar NPN transistor |
SGS-ATES |
919 |
2N5366 |
Planar epitaxial passivated PNP silicon transistor. 40V, 300mA. |
General Electric Solid State |
920 |
2N5400 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
921 |
2N5400 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
922 |
2N5400 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
923 |
2N5401 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
924 |
2N5401 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
925 |
2N5401 |
Silicon PNP epitaxial transistor (PCT Process) |
TOSHIBA |
926 |
2N5415CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
927 |
2N5416CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
928 |
2N5447 |
Silicon PNP Epitaxial Planar AF Transistor |
AEG-TELEFUNKEN |
929 |
2N5447 |
Silicon PNP epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
930 |
2N5448 |
Silicon PNP Epitaxial Planar AF Transistor |
AEG-TELEFUNKEN |
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