No. |
Part Name |
Description |
Manufacturer |
961 |
2N5782 |
Silicon P-N-P epitaxial-base transistor. -65V, 10W. |
General Electric Solid State |
962 |
2N5783 |
Silicon P-N-P epitaxial-base transistor. -45V, 10W. |
General Electric Solid State |
963 |
2N5784 |
Silicon N-P-N epitaxial-base transistor. 80V, 10W. |
General Electric Solid State |
964 |
2N5784 |
SILICON EPITAXIAL NPN TRANSISTOR |
SemeLAB |
965 |
2N5785 |
Silicon N-P-N epitaxial-base transistor. 65V, 10W. |
General Electric Solid State |
966 |
2N5786 |
Silicon N-P-N epitaxial-base transistor. 45V, 10W. |
General Electric Solid State |
967 |
2N5786 |
SILICON EPITAXIAL NPN TRANSISTOR |
SemeLAB |
968 |
2N5829 |
Silicon PNP Epitaxial Planar HF Transistor |
IPRS Baneasa |
969 |
2N5875 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
970 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
971 |
2N5876 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
972 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
973 |
2N5877 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
974 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
975 |
2N5878 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
976 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
977 |
2N6032 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
978 |
2N6033 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
979 |
2N6034 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
980 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
981 |
2N6035 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
982 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
983 |
2N6036 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
984 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
985 |
2N6037 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
986 |
2N6037 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
987 |
2N6038 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
988 |
2N6038 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
989 |
2N6039 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
990 |
2N6039 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
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