No. |
Part Name |
Description |
Manufacturer |
991 |
2N6050 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
992 |
2N6050 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
993 |
2N6051 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
994 |
2N6051 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
995 |
2N6052 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
996 |
2N6052 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
997 |
2N6053 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
998 |
2N6053 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
999 |
2N6054 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
1000 |
2N6054 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
1001 |
2N6055 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
1002 |
2N6055 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
1003 |
2N6056 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
1004 |
2N6056 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
1005 |
2N6057 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
1006 |
2N6057 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
1007 |
2N6058 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
1008 |
2N6058 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
1009 |
2N6059 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
1010 |
2N6059 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
1011 |
2N6078 |
NPN MULTI-EPITAXIAL POWER TRANSISTOR |
SemeLAB |
1012 |
2N6106 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1013 |
2N6106 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
1014 |
2N6107 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1015 |
2N6107 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
1016 |
2N6107 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5496 |
SESCOSEM |
1017 |
2N6107 |
Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package |
SGS-ATES |
1018 |
2N6108 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1019 |
2N6108 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
1020 |
2N6109 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| | | |