No. |
Part Name |
Description |
Manufacturer |
1021 |
2N6109 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
1022 |
2N6109 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 |
SESCOSEM |
1023 |
2N6109 |
Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package |
SGS-ATES |
1024 |
2N6110 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1025 |
2N6110 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
1026 |
2N6111 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1027 |
2N6111 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
1028 |
2N6111 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5494 |
SESCOSEM |
1029 |
2N6111 |
Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package |
SGS-ATES |
1030 |
2N6121 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. |
General Electric Solid State |
1031 |
2N6121 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
1032 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1033 |
2N6122 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
1034 |
2N6122 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
1035 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1036 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
1037 |
2N6123 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
1038 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1039 |
2N6124 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. |
General Electric Solid State |
1040 |
2N6124 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
1041 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1042 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
1043 |
2N6125 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
1044 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1045 |
2N6126 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
1046 |
2N6126 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
1047 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1048 |
2N6246 |
Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. |
General Electric Solid State |
1049 |
2N6247 |
Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. |
General Electric Solid State |
1050 |
2N6248 |
Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. |
General Electric Solid State |
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