| No. |
Part Name |
Description |
Manufacturer |
| 751 |
15KW260 |
260.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 752 |
15KW260A |
260.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 753 |
15KW280 |
280.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 754 |
15KW280A |
280.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 755 |
15SMCJ |
SURFACE MOUNT TRANSIENT (VOLTAGE SUPPRESSOR VOLTAGE - 5.0 to 220 Volts 1500 Watt Peak Power Pulse) |
Panjit International Inc |
| 756 |
1N191 |
Gold Bonded Germanium Diode(Peak Inverse Voltage : 90V, Peak Forward Current : 500mA) |
BKC International Electronics |
| 757 |
1N191 |
Gold Bonded Germanium Diode(Peak Inverse Voltage : 90V, Peak Forward Current : 500mA) |
BKC International Electronics |
| 758 |
1N4001 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 50V. |
Jinan Gude Electronic Device |
| 759 |
1N4002 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 100V. |
Jinan Gude Electronic Device |
| 760 |
1N4003 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 200V. |
Jinan Gude Electronic Device |
| 761 |
1N4004 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 400V. |
Jinan Gude Electronic Device |
| 762 |
1N4005 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 600V. |
Jinan Gude Electronic Device |
| 763 |
1N4006 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 800V. |
Jinan Gude Electronic Device |
| 764 |
1N4007 |
1.0A silicon rectifier. Max recurrent peak reverse voltage 1000V. |
Jinan Gude Electronic Device |
| 765 |
1N5391G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V. |
Jinan Gude Electronic Device |
| 766 |
1N5392G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V. |
Jinan Gude Electronic Device |
| 767 |
1N5393G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 200 V, max RMS voltage 140 V, max D. C blocking voltage 200 V. |
Jinan Gude Electronic Device |
| 768 |
1N5395G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 400 V, max RMS voltage 280 V, max D. C blocking voltage 400 V. |
Jinan Gude Electronic Device |
| 769 |
1N5397G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 600 V, max RMS voltage 420 V, max D. C blocking voltage 600 V. |
Jinan Gude Electronic Device |
| 770 |
1N5398G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. |
Jinan Gude Electronic Device |
| 771 |
1N5399G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V. |
Jinan Gude Electronic Device |
| 772 |
1N6267 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 1500W |
Shanghai Sunrise Electronics |
| 773 |
1N6373 |
5.00V; 160A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 774 |
1N6373-D |
1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
ON Semiconductor |
| 775 |
1N6374 |
8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 776 |
1N6375 |
10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 777 |
1N6376 |
12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 778 |
1N6377 |
15.00V; 60A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 779 |
1N6378 |
18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 780 |
1N6379 |
22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
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