| No. |
Part Name |
Description |
Manufacturer |
| 781 |
1N6380 |
22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 782 |
1N6381 |
45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 783 |
1N6382 |
8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 784 |
1N6382 |
1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors |
ON Semiconductor |
| 785 |
1N6382-D |
1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
ON Semiconductor |
| 786 |
1N6383 |
10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 787 |
1N6384 |
12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 788 |
1N6385 |
15.00V; 60A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 789 |
1N6386 |
18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 790 |
1N6387 |
22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 791 |
1N6388 |
36.00V; 23A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 792 |
1N6389 |
45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 793 |
1S1921A |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -200V |
Hitachi Semiconductor |
| 794 |
1S1921B |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -400V |
Hitachi Semiconductor |
| 795 |
1S1921C |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -600V |
Hitachi Semiconductor |
| 796 |
1S1921D |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -800V |
Hitachi Semiconductor |
| 797 |
1S1921E |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1000V |
Hitachi Semiconductor |
| 798 |
1S1921F |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1200V |
Hitachi Semiconductor |
| 799 |
1S2076 |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-35V, VR=-30V |
Hitachi Semiconductor |
| 800 |
1S2076A |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V |
Hitachi Semiconductor |
| 801 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 802 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 803 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 804 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 805 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 806 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 807 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 808 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 809 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 810 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
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