| No. |
Part Name |
Description |
Manufacturer |
| 781 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 782 |
2N5294 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM132 |
SESCOSEM |
| 783 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 784 |
2N5296 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM133 |
SESCOSEM |
| 785 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 786 |
2N5298 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM134 |
SESCOSEM |
| 787 |
2N5302 |
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
| 788 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 789 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 790 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 791 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 792 |
2N5400 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 793 |
2N5401 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 794 |
2N5484 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 795 |
2N5485 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 796 |
2N5486 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 797 |
2N5490 |
NPN Power Transistor Homobase - LF amplifier and switching |
SESCOSEM |
| 798 |
2N5492 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6109 |
SESCOSEM |
| 799 |
2N5494 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6111 |
SESCOSEM |
| 800 |
2N5496 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6107 |
SESCOSEM |
| 801 |
2N5550 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 802 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 803 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 804 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 805 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 806 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 807 |
2N5942 |
Application Note - Broadband Linear Power Amplifiers using Push-Pull transistors |
Motorola |
| 808 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 809 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 810 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
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