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Datasheets for ER A

Datasheets found :: 30568
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No. Part Name Description Manufacturer
811 2N6031 Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
812 2N6099 NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM141 SESCOSEM
813 2N6101 NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM142 SESCOSEM
814 2N6107 PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5496 SESCOSEM
815 2N6107 PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. USHA India LTD
816 2N6109 PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 SESCOSEM
817 2N6111 PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5494 SESCOSEM
818 2N6266 10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note RCA Solid State
819 2N6267 10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note RCA Solid State
820 2N6292 Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. USHA India LTD
821 2N6312 POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION MOSPEC Semiconductor
822 2N653 PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range Motorola
823 2N654 PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range Motorola
824 2N655 PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range Motorola
825 2N6619 12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application Siemens
826 2N669 PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications Motorola
827 2N669 PNP germanium power transistor for economical power switching circuits and commercial grade power amplifier applications Motorola
828 2N697 NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) ITT Semiconductors
829 2N699 NPN silicon annular transistor designed for medium-current switching and amplifier applications Motorola
830 2N700 PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications Motorola
831 2N700 PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications Motorola
832 2N700A PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications Motorola
833 2N700A PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications Motorola
834 2N707 NPN silicon epitaxial mesa transistor for VHF oscillator and class C amplifier applications Motorola
835 2N707A NPN silicon epitaxial mesa transistor for VHF oscillator and class C amplifier applications Motorola
836 2N718 NPN silicon annular Star transistor for medium current switching and amplifier applications Motorola
837 2N718A NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications Motorola
838 2N721 PNP silicon annular transistor for high-frequency general-purpose amplifier applications Motorola
839 2N741 PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications Motorola
840 2N741 PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications Motorola


Datasheets found :: 30568
Page: | 24 | 25 | 26 | 27 | 28 | 29 | 30 | 31 | 32 |



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