| No. |
Part Name |
Description |
Manufacturer |
| 781 |
ISPLSI5512VE-100LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 782 |
ISPLSI5512VE-100LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 783 |
ISPLSI5512VE-100LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 784 |
ISPLSI5512VE-100LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 785 |
ISPLSI5512VE-100LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 786 |
ISPLSI5512VE-125LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 787 |
ISPLSI5512VE-125LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 788 |
ISPLSI5512VE-125LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 789 |
ISPLSI5512VE-125LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 790 |
ISPLSI5512VE-125LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 791 |
ISPLSI5512VE-125LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 792 |
ISPLSI5512VE-125LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 793 |
ISPLSI5512VE-125LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 794 |
ISPLSI5512VE-155LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
| 795 |
ISPLSI5512VE-155LF256 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
| 796 |
ISPLSI5512VE-155LF272 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
| 797 |
ISPLSI5512VE-155LF388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
| 798 |
ISPLSI5512VE-80LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 799 |
ISPLSI5512VE-80LF256I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 800 |
ISPLSI5512VE-80LF272I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 801 |
ISPLSI5512VE-80LF388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 802 |
KBL403 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 4.0 A. |
Shanghai Sunrise Electronics |
| 803 |
KBL403 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 4.0 A. |
Shanghai Sunrise Electronics |
| 804 |
KBP005 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 2.0 A. |
Shanghai Sunrise Electronics |
| 805 |
KBP005 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 2.0 A. |
Shanghai Sunrise Electronics |
| 806 |
KBPC10005 |
10 A high current bridge rectifier. Max reccurent peak reverse voltage 50 V. |
Comchip Technology |
| 807 |
KBPC10005 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 10.0 A. |
Shanghai Sunrise Electronics |
| 808 |
KBPC10005 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 10.0 A. |
Shanghai Sunrise Electronics |
| 809 |
KBPC1001 |
10 A high current bridge rectifier. Max reccurent peak reverse voltage 100 V. |
Comchip Technology |
| 810 |
KBPC1001 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 10.0 A. |
Shanghai Sunrise Electronics |
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