| No. |
Part Name |
Description |
Manufacturer |
| 871 |
KBPC3504W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 400 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 872 |
KBPC3504W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 400 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 873 |
KBPC3506 |
35 A high current bridge rectifier. Max reccurent peak reverse voltage 600 V. |
Comchip Technology |
| 874 |
KBPC3506W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 875 |
KBPC3506W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 876 |
KBPC3508 |
35 A high current bridge rectifier. Max reccurent peak reverse voltage 800 V. |
Comchip Technology |
| 877 |
KBPC3508W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 800 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 878 |
KBPC3508W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 800 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 879 |
KBPC3510 |
35 A high current bridge rectifier. Max reccurent peak reverse voltage 1000 V. |
Comchip Technology |
| 880 |
KBPC3510W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 881 |
KBPC3510W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 882 |
KBPC50005 |
50 A high current bridge rectifier. Max reccurent peak reverse voltage 50 V. |
Comchip Technology |
| 883 |
KBPC5001 |
50 A high current bridge rectifier. Max reccurent peak reverse voltage 100 V. |
Comchip Technology |
| 884 |
KBPC5002 |
50 A high current bridge rectifier. Max reccurent peak reverse voltage 200 V. |
Comchip Technology |
| 885 |
KBPC5004 |
50 A high current bridge rectifier. Max reccurent peak reverse voltage 400 V. |
Comchip Technology |
| 886 |
KBPC5006 |
50 A high current bridge rectifier. Max reccurent peak reverse voltage 600 V. |
Comchip Technology |
| 887 |
KBPC5008 |
50 A high current bridge rectifier. Max reccurent peak reverse voltage 800 V. |
Comchip Technology |
| 888 |
KBPC5010 |
50 A high current bridge rectifier. Max reccurent peak reverse voltage 1000 V. |
Comchip Technology |
| 889 |
KIA8251 |
BIPOLAR LINEAR INTEGRATED CIRCUIT (MAX POWER 30W BTL X 4CH AUDIO POWER IC) |
Korea Electronics (KEC) |
| 890 |
KIA8251AH |
BIPOLAR LINEAR INTEGRATED CIRCUIT (MAX POWER 30W BTL X 4CH AUDIO POWER IC) |
Korea Electronics (KEC) |
| 891 |
KIA8252 |
BIPOLAR LINEAR INTEGRATED CIRCUIT (MAX POWER 37W QUAD BTL AUDIO POWER AMPLIFIER) |
Korea Electronics (KEC) |
| 892 |
KIA8252H |
BIPOLAR LINEAR INTEGRATED CIRCUIT (MAX POWER 37W QUAD BTL AUDIO POWER AMPLIFIER) |
Korea Electronics (KEC) |
| 893 |
KIA8259 |
BIPOLAR LINEAR INTEGRATED CIRCUIT (MAX POWER 37W QUAD BTL AUDIO POWER AMPLIFIER) |
Korea Electronics (KEC) |
| 894 |
KIA8259H |
BIPOLAR LINEAR INTEGRATED CIRCUIT (MAX POWER 37W QUAD BTL AUDIO POWER AMPLIFIER) |
Korea Electronics (KEC) |
| 895 |
KIA8260AH |
BIPOLAR LINEAR INTEGRATED CIRCUIT (MAX POWER 40W QUAD BTL AUDIO POWER AMPLIFIER) |
Korea Electronics (KEC) |
| 896 |
KIA8260H |
Max power 40W quad BTL audio power amplifier |
Korea Electronics (KEC) |
| 897 |
KIA8262 |
BIPOLAR LINEAR INTEGRATED CIRCUIT (MAX POWER 43W QUAD BTL AUDIO POWER AMPLIFIER) |
Korea Electronics (KEC) |
| 898 |
KIA8262H |
BIPOLAR LINEAR INTEGRATED CIRCUIT (MAX POWER 43W QUAD BTL AUDIO POWER AMPLIFIER) |
Korea Electronics (KEC) |
| 899 |
KM44S3203BT-G_F10 |
8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 66 MHz (CL=2&3). |
Samsung Electronic |
| 900 |
KM44S3203BT-G_F8 |
8M x 4bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz (CL=3). |
Samsung Electronic |
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