| No. |
Part Name |
Description |
Manufacturer |
| 781 |
AP9915K |
N CHANNEL ENHANCEMENT MODE POWER MOSFET |
Advanced Power Electronics Corp. |
| 782 |
AP9936M |
N CHANNEL ENHANCEMENT MODE POWER MOSFET |
Advanced Power Electronics Corp. |
| 783 |
AUIRFN8458 |
40V Dual N Channel HEXFET Power MOSFET in a PQFN 5 x 6 L package |
International Rectifier |
| 784 |
AUIRFN8458TR |
40V Dual N Channel HEXFET Power MOSFET in a PQFN 5 x 6 L package |
International Rectifier |
| 785 |
AUIRFN8459 |
40V Dual N Channel HEXFET Power MOSFET in a PQFN 5 x 6 L package |
International Rectifier |
| 786 |
AUIRFN8459TR |
40V Dual N Channel HEXFET Power MOSFET in a PQFN 5 x 6 L package |
International Rectifier |
| 787 |
BC264 |
N Channel Junction Field Effect Transistors |
Micro Electronics |
| 788 |
BC264 |
N Channel Junction Field Effect Transistors |
Philips |
| 789 |
BC264 |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 790 |
BC264A |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 791 |
BC264B |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 792 |
BC264C |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 793 |
BC264D |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 794 |
BF2000 |
Silicon N Channel MOSFET Tetrode |
Siemens |
| 795 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 796 |
BF245 |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
| 797 |
BF245 |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 798 |
BF245A |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
| 799 |
BF245A |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 800 |
BF245B |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
| 801 |
BF245B |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 802 |
BF245C |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
| 803 |
BF245C |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 804 |
BF247 |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
| 805 |
BF247 |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 806 |
BF247A |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
| 807 |
BF247A |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 808 |
BF247B |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
| 809 |
BF247B |
N channel field effect transistor (epoxy can) |
SESCOSEM |
| 810 |
BF247C |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
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