No. |
Part Name |
Description |
Manufacturer |
811 |
BF247C |
N channel field effect transistor (epoxy can) |
SESCOSEM |
812 |
BF256 |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
813 |
BF256A |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
814 |
BF256B |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
815 |
BF256C |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
816 |
BF543 |
Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) |
Siemens |
817 |
BF987 |
SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) |
Siemens |
818 |
BF994 |
Silicon N Channel MOSFET Tetrode (For VHF applications/ especially for input and mixer stages with a wide tuning range/ e.g. in CATV tuners) |
Siemens |
819 |
BF994S |
Silicon N Channel MOSFET Tetrode (For VHF applications, especially for input and mixer stages with a wide tuning range, e.g. in CATV tuners) |
Siemens |
820 |
BF995 |
Silicon N Channel MOSFET Tetrode (For input and mixer stages in FM and VHF TV tuners) |
Siemens |
821 |
BF996S |
Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) |
Siemens |
822 |
BF997 |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
Siemens |
823 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
824 |
BF999 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
Siemens |
825 |
BFR29 |
Silicon n channel field effect transistor, insulated GATE FET (MOST) |
Mullard |
826 |
BFR30 |
N channel junction field effect transistor |
Mullard |
827 |
BFR31 |
N channel junction field effect transistor |
Mullard |
828 |
BFS21 |
Silicon N channel field effect transistor |
Mullard |
829 |
BFS21A |
Silicon N channel field effect transistor |
Mullard |
830 |
BFS28 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
831 |
BFW10 |
Silicon n channel field effect transistor, Junction FET |
Mullard |
832 |
BFW11 |
Silicon n channel field effect transistor, Junction FET |
Mullard |
833 |
BFW61 |
Silicon n channel field effect transistor, Junction FET |
Mullard |
834 |
BS107 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) |
Siemens |
835 |
BS170 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) |
Siemens |
836 |
BSM101 |
SIMOPAC Module (Power module Single switch N channel Enhancement mode) |
Siemens |
837 |
BSM101AR |
SIMOPAC Module (Power module Single switch N channel Enhancement mode) |
Siemens |
838 |
BSM111 |
SIMOPAC Module (Power module Single switch N channel Enhancement mode) |
Siemens |
839 |
BSM111AR |
SIMOPAC Module (Power module Single switch N channel Enhancement mode) |
Siemens |
840 |
BSM121AR |
SIMOPAC Module (Power module Single switch N channel Enhancement mode) |
Siemens |
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