| No. |
Part Name |
Description |
Manufacturer |
| 8011 |
NM93CS66MM8 |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
| 8012 |
NM93CS66MN |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
| 8013 |
NM93CS66N |
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read |
National Semiconductor |
| 8014 |
NMC9306 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
| 8015 |
NMC9306EM8 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
| 8016 |
NMC9306EN |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
| 8017 |
NMC9306M8 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
| 8018 |
NMC9306N |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
| 8019 |
NMC9307 |
256-Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
| 8020 |
NMC9307EM |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
| 8021 |
NMC9307EN |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
| 8022 |
NMC9307M |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
| 8023 |
NMC9307N |
Vcc=5V+/-10%, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
| 8024 |
NMC9313B |
5V, 256-bit serial electrically erasable programmable memory |
National Semiconductor |
| 8025 |
NMC9314B |
5V, 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
| 8026 |
NMC9346 |
1024 Bit Serial Electrically Erasable Programmable Memory |
National Semiconductor |
| 8027 |
NMC9346EM8 |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
| 8028 |
NMC9346EN |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
| 8029 |
NMC9346MB |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
| 8030 |
NMC9346N |
+6 to -0.3V; 1024-bit serial electrically erasable programmable memory |
National Semiconductor |
| 8031 |
NX25P10 |
1M BIT 2M BIT AND 4M BIT SERIAL FLASH MEMORY WITH 10MHZ SPI |
etc |
| 8032 |
NX25P20 |
1M BIT 2M BIT AND 4M BIT SERIAL FLASH MEMORY WITH 10MHZ SPI |
etc |
| 8033 |
NX25P40 |
1M BIT 2M BIT AND 4M BIT SERIAL FLASH MEMORY WITH 10MHZ SPI |
etc |
| 8034 |
NX26F011A |
1M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 2-PIN NXS INTERFACE |
etc |
| 8035 |
NX26F011A-3V-R |
1M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 2-PIN NXS INTERFACE |
etc |
| 8036 |
NX26F011A-5V-R |
1M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 2-PIN NXS INTERFACE |
etc |
| 8037 |
NX26F041A |
1M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 2-PIN NXS INTERFACE |
etc |
| 8038 |
NX26F041A-3V-R |
1M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 2-PIN NXS INTERFACE |
etc |
| 8039 |
NX26F041A-5V-R |
1M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 2-PIN NXS INTERFACE |
etc |
| 8040 |
PM-7543 |
12-BIT Serial Input Multiplying CMOS D/A converter |
Precision Monolithics |
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