| No. |
Part Name |
Description |
Manufacturer |
| 811 |
1N6087 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 812 |
1N6088 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 813 |
1N6089 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 814 |
1N6090 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 815 |
1N6091 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 816 |
1NE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 1000V |
TOSHIBA |
| 817 |
1QE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 1200V |
TOSHIBA |
| 818 |
1S1417 |
Controlled avalanche silicon rectifier 25A |
TOSHIBA |
| 819 |
1S1418 |
Controlled avalanche silicon rectifier 25A |
TOSHIBA |
| 820 |
1S1419 |
Controlled avalanche silicon rectifier 25A |
TOSHIBA |
| 821 |
1S1461 |
Controlled avalanche silicon rectifier 12A |
TOSHIBA |
| 822 |
1S1462 |
Controlled avalanche silicon rectifier 12A |
TOSHIBA |
| 823 |
1S1463 |
Controlled avalanche silicon rectifier 12A |
TOSHIBA |
| 824 |
1SS97 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
| 825 |
1SS99 |
Double balanced mixer using NEEC's schottky barrier diode 1SS97 or 1SS99 - Application Note |
NEC |
| 826 |
20PM4AC |
20A Single Phase Avalanche Controlled Rectifier Bridge 400V |
IPRS Baneasa |
| 827 |
20PM6AC |
20A Single Phase Avalanche Controlled Rectifier Bridge 600V |
IPRS Baneasa |
| 828 |
20PM8AC |
20A Single Phase Avalanche Controlled Rectifier Bridge 800V |
IPRS Baneasa |
| 829 |
212R2S |
Silicon rectifier diode - Controlled avalanche |
SESCOSEM |
| 830 |
212R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
| 831 |
25FXF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 3000V 8kW |
TOSHIBA |
| 832 |
25LF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 800V 12kW |
TOSHIBA |
| 833 |
25NF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 1000V 12kW |
TOSHIBA |
| 834 |
25QF11 |
Silicon Alloy-Diffused junction avalanche rectifier 25A 1200V 12kW |
TOSHIBA |
| 835 |
26R2S |
Silicon rectifier diode - Controlled avalanche |
SESCOSEM |
| 836 |
26R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
| 837 |
28R2S |
Silicon rectifier diode - Controlled avalanche |
SESCOSEM |
| 838 |
28R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
| 839 |
2N5071 |
24W(CW), 76-MHz Emiter-Balasted Overlay RF Power Transistor |
RCA Solid State |
| 840 |
2N5913 |
Silicon NPN Overalay RF Transistor, 12.5 Volt, for class-C VHF/UHF amplifiers |
RCA Solid State |
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