| No. |
Part Name |
Description |
Manufacturer |
| 841 |
2N6266 |
5-W, 2-GHz, Emitter-Balasted Silicon N-P-N Overlay RF Transistor |
RCA Solid State |
| 842 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 843 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 844 |
2SC2337 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 845 |
2SC2337A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 846 |
2SK3451-01 |
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof |
Fuji Electric |
| 847 |
2W005G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 848 |
2W01G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 849 |
2W02G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 850 |
2W04G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 851 |
2W06G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 852 |
2W08G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 853 |
2W10G |
Standard Avalanche SMD Rectifier Bridge Rectifier, Rectifier Forward Current 2.0 A |
Vishay |
| 854 |
30R2S |
Silicon rectifier diode - Controlled avalanche |
SESCOSEM |
| 855 |
30R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
| 856 |
312R2S |
Silicon rectifier diode - Controlled avalanche |
SESCOSEM |
| 857 |
312R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
| 858 |
36R2S |
Silicon rectifier diode - Controlled avalanche |
SESCOSEM |
| 859 |
36R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
| 860 |
38R2S |
Silicon rectifier diode - Controlled avalanche |
SESCOSEM |
| 861 |
38R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
| 862 |
3LF11 |
Silicon alloy-diffused junction avalanche rectifier 3A 500V |
TOSHIBA |
| 863 |
3NF11 |
Silicon alloy-diffused junction avalanche rectifier 3A 1000V |
TOSHIBA |
| 864 |
3QF11 |
Silicon alloy-diffused junction avalanche rectifier 3A 1200V |
TOSHIBA |
| 865 |
40R2S |
Silicon rectifier diode - Controlled avalanche |
SESCOSEM |
| 866 |
40R2SR |
Silicon rectifier diode - Controlled avalanche, anode connected to case |
SESCOSEM |
| 867 |
420E212 |
12V; dual 4-20mA control loop protector. For security alarm systems, industrial control & monitoring systems, remote tech site station, process control loops |
Protek Devices |
| 868 |
420E225 |
25V; dual 4-20mA control loop protector. For security alarm systems, industrial control & monitoring systems, remote tech site station, process control loops |
Protek Devices |
| 869 |
420E228 |
28V; dual 4-20mA control loop protector. For security alarm systems, industrial control & monitoring systems, remote tech site station, process control loops |
Protek Devices |
| 870 |
420E236 |
36V; dual 4-20mA control loop protector. For security alarm systems, industrial control & monitoring systems, remote tech site station, process control loops |
Protek Devices |
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