| No. |
Part Name |
Description |
Manufacturer |
| 811 |
TC528128BZ-10 |
100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
| 812 |
TC528128BZ-80 |
80ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
| 813 |
TC528267 |
262144 Words x 8 Bits Multiport DRAM |
TOSHIBA |
| 814 |
TC530 |
The TC530/534 are serial analog data acquisition subsystems ideal for high precision measurements (up to 17bits plus sign). The TC530 consists of a dual slope integrating A/D converter, negative power supply generator and 3 wire serial int |
Microchip |
| 815 |
TC534 |
The TC530/534 are serial analog data acquisition subsystems ideal for high precision measurements (up to 17bits plus sign). The TC530 consists of a dual slope integrating A/D converter, negative power supply generator and 3 wire serial int |
Microchip |
| 816 |
TC55465AJ-15 |
15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 817 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 818 |
TC55465AJ-25 |
25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 819 |
TC55465AJ-35 |
35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 820 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 821 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 822 |
TC55465AP-35 |
35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 823 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 824 |
TC5565AFL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 825 |
TC5565AFL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 826 |
TC5565AFL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 827 |
TC5565APL |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 828 |
TC5565APL-10 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 829 |
TC5565APL-12 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 830 |
TC5565APL-15 |
65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology |
TOSHIBA |
| 831 |
TC57512AD-15 |
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
etc |
| 832 |
TC57512AD-15 |
150ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
| 833 |
TC57512AD-20 |
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
etc |
| 834 |
TC57512AD-20 |
200ns; V(cc): -0.6 to +7V; 1.5W; 65,536 words x 8 bits CMOS UV erasable and electrically programmable read only memory |
TOSHIBA |
| 835 |
TC58FVB160AF |
16-MBIT (2M x 8 BITS / 1M x 16 BITS) CMOS FLASH MEMORY |
TOSHIBA |
| 836 |
TC58FVB160AXB-70 |
16-MBIT (2M � 8 BITS / 1M � 16 BITS) CMOS FLASH MEMORY |
TOSHIBA |
| 837 |
TC58FVB321 |
32-MBIT (4M �� 8 BITS / 2M �� 16 BITS) CMOS FLASH MEMORY |
TOSHIBA |
| 838 |
TC58FVM7B2 |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY |
TOSHIBA |
| 839 |
TC58FVM7B2AFT |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY |
TOSHIBA |
| 840 |
TC58FVM7T2AFT |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY |
TOSHIBA |
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