| No. |
Part Name |
Description |
Manufacturer |
| 871 |
TC59LM814CFT-60 |
4,194,304-WORDSx4 BANKSx16-BITS Network FCRAM or 8,388,608-WORDSx4BANKSx8-BITS Network FCRAM |
TOSHIBA |
| 872 |
TC59S6404BFTL-10 |
4,194,304-words x 4BANKS x 4-BITS synchronous dynamic RAM |
TOSHIBA |
| 873 |
TC59S6404BFTL-80 |
4,194,304-words x 4BANKS x 4-BITS synchronous dynamic RAM |
TOSHIBA |
| 874 |
TC59S6416BFT-10 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
| 875 |
TC59S6416BFTL-10 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
| 876 |
TC59S6416BFTL-80 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
| 877 |
TC850 |
The TC850 is a monolithic CMOS analog-to-digital converter (ADC)with resolution of 15-bits plus sign. It combines a chopper-stabilized buffer and integrator with a unique multiple-slope integration technique that increases conversion speed |
Microchip |
| 878 |
TC9250F |
16 BITS RESISTER STRINGS DA CONVERTER |
TOSHIBA |
| 879 |
TC9250P |
16 BITS RESISTER STRINGS DA CONVERTER |
TOSHIBA |
| 880 |
TDC1030 |
64 Words by 9 Bits Cascadable |
TRW |
| 881 |
THC63LVD104 |
90MHz 30Bits COLOR LVDS Receiver |
etc |
| 882 |
THC63LVD104A |
90MHz 30Bits COLOR LVDS Receiver |
etc |
| 883 |
THMY644071BEG-10 |
4,194,304-words by 64-BITS synchronous DRAM module |
TOSHIBA |
| 884 |
THMY644071BEG-80 |
4,194,304-words by 64-BITS synchronous DRAM module |
TOSHIBA |
| 885 |
TMC2272 |
Digital Colorspace Converter/Corrector 36 Bit Color (12 Bits x 3 Components) 40MHz |
TRW |
| 886 |
TMM2018AP |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 887 |
TMM2018AP |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 888 |
TMM2018AP-25 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 889 |
TMM2018AP-25 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 890 |
TMM2018AP-35 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 891 |
TMM2018AP-35 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 892 |
TMM2018AP-45 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 893 |
TMM2018AP-45 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
| 894 |
TMM2063AP-10 |
100ns ; 80mA; V(cc): -0.5 to +7.0V; 0.8W; 65,536 bits high speed and low power static access memory |
TOSHIBA |
| 895 |
TMM2063AP-12 |
120ns ; 80mA; V(cc): -0.5 to +7.0V; 0.8W; 65,536 bits high speed and low power static access memory |
TOSHIBA |
| 896 |
TMM2063AP-70 |
70ns ; 80mA; V(cc): -0.5 to +7.0V; 0.8W; 65,536 bits high speed and low power static access memory |
TOSHIBA |
| 897 |
TMS27C512-10JE |
65536 by 8 bits programable read-only memories, single 5-V power supply, 100ns |
Texas Instruments |
| 898 |
TMS27C512-10JL |
65536 by 8 bits programable read-only memories, single 5-V power supply, 100ns |
Texas Instruments |
| 899 |
TMS27C512-12JE |
65536 by 8 bits programable read-only memories, single 5-V power supply, 120ns |
Texas Instruments |
| 900 |
TMS27C512-12JL |
65536 by 8 bits programable read-only memories, single 5-V power supply, 120ns |
Texas Instruments |
| | | |
