No. |
Part Name |
Description |
Manufacturer |
811 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
812 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
813 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
814 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
815 |
2N5202 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
816 |
2N5210 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
817 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
818 |
2N5232A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
819 |
2N5249 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
820 |
2N5249A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
821 |
2N5306 |
Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. |
General Electric Solid State |
822 |
2N5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
823 |
2N5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
824 |
2N5308A |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
825 |
2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE |
SemeLAB |
826 |
2N5366 |
Planar epitaxial passivated PNP silicon transistor. 40V, 300mA. |
General Electric Solid State |
827 |
2N5400 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
828 |
2N5400 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
829 |
2N5400 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
830 |
2N5401 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
831 |
2N5401 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
832 |
2N5401 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
833 |
2N5415CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
834 |
2N5416CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
835 |
2N5447 |
Silicon PNP epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
836 |
2N5448 |
Silicon PNP epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
837 |
2N5449 |
Silicon NPN epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
838 |
2N5450 |
Silicon NPN epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
839 |
2N5550 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
840 |
2N5550 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
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