No. |
Part Name |
Description |
Manufacturer |
841 |
2N5550 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
842 |
2N5550 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
843 |
2N5550BU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
844 |
2N5550TA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
845 |
2N5550TAR |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
846 |
2N5550TF |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
847 |
2N5550TFR |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
848 |
2N5550_D26Z |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
849 |
2N5550_J24Z |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
850 |
2N5551 |
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR |
Boca Semiconductor Corporation |
851 |
2N5551 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
852 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
853 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
854 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
855 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
856 |
2N5635 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
857 |
2N5636 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
858 |
2N5637 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
859 |
2N5770 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
860 |
2N5781 |
Silicon P-N-P epitaxial-base transistor. -80V, 10W. |
General Electric Solid State |
861 |
2N5782 |
Silicon P-N-P epitaxial-base transistor. -65V, 10W. |
General Electric Solid State |
862 |
2N5783 |
Silicon P-N-P epitaxial-base transistor. -45V, 10W. |
General Electric Solid State |
863 |
2N5784 |
Silicon N-P-N epitaxial-base transistor. 80V, 10W. |
General Electric Solid State |
864 |
2N5784 |
SILICON EPITAXIAL NPN TRANSISTOR |
SemeLAB |
865 |
2N5785 |
Silicon N-P-N epitaxial-base transistor. 65V, 10W. |
General Electric Solid State |
866 |
2N5786 |
Silicon N-P-N epitaxial-base transistor. 45V, 10W. |
General Electric Solid State |
867 |
2N5786 |
SILICON EPITAXIAL NPN TRANSISTOR |
SemeLAB |
868 |
2N5829 |
Silicon PNP Epitaxial Planar HF Transistor |
IPRS Baneasa |
869 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
870 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
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