| No. |
Part Name |
Description |
Manufacturer |
| 811 |
2SD2155 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 812 |
2SD2206 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications |
TOSHIBA |
| 813 |
2SD2209 |
For power amplification and switching |
Panasonic |
| 814 |
2SD2217 |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
NEC |
| 815 |
2SD2242A |
Silicon NPN triple diffusion planar type Darlington(For power amplification) |
Panasonic |
| 816 |
2SD2254 |
Silicon PNP epitaxial planar type Darlington(For power amplification) |
Panasonic |
| 817 |
2SD2254 |
Silicon NPN triple diffusion planar type Darlington(For power amplification) |
Panasonic |
| 818 |
2SD2255 |
Silicon NPN triple diffusion planar type Darlington For power amplification |
Panasonic |
| 819 |
2SD227 |
Medium Power Amplifiers and Switches |
Unknow |
| 820 |
2SD227 |
Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. |
USHA India LTD |
| 821 |
2SD2273 |
Silicon NPN triple diffusion planar type Darlington(For power amplification) |
Panasonic |
| 822 |
2SD234 |
Silicon NPN diffused junction transistor, audio power amplifier applications, complementary to 2SB434 |
TOSHIBA |
| 823 |
2SD2341 |
For power amplification |
Panasonic |
| 824 |
2SD235 |
Silicon NPN diffused junction transistor, audio power amplifier applications, complementary to 2SB435 |
TOSHIBA |
| 825 |
2SD235 |
NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 826 |
2SD2352 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 827 |
2SD2353 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 828 |
2SD2374 |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
| 829 |
2SD2374 |
Silicon NPN triple diffusion planar type(For power amplification) |
Panasonic |
| 830 |
2SD2374A |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 831 |
2SD2375 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
| 832 |
2SD2384 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications |
TOSHIBA |
| 833 |
2SD2385 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications |
TOSHIBA |
| 834 |
2SD2386 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications |
TOSHIBA |
| 835 |
2SD2387 |
Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications |
TOSHIBA |
| 836 |
2SD2406 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 837 |
2SD2414 |
NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING/ POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 838 |
2SD2414(SM) |
Transistor Silicon NPN Triple Diffused Type High Current Switching Applications Power Amplifier Applications |
TOSHIBA |
| 839 |
2SD2414SM |
High Current Switching Applications Power Amplifier Applications |
TOSHIBA |
| 840 |
2SD2420 |
Power Device - Power Transistors - General-Purpose power amplification |
Panasonic |
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