| No. |
Part Name |
Description |
Manufacturer |
| 931 |
2SD973 |
Silicon NPN epitaxial planer type(For low-frequency power amplification) |
Panasonic |
| 932 |
2SJ200 |
Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application |
TOSHIBA |
| 933 |
2SJ201 |
Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application |
TOSHIBA |
| 934 |
2SJ313 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
| 935 |
2SJ338 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
| 936 |
2SJ440 |
FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE - AUDIO FREQUENCY POWER AMPLIFIER APPLICATION |
TOSHIBA |
| 937 |
2SJ440-Y |
P CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION) |
TOSHIBA |
| 938 |
2SJ48 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 939 |
2SJ49 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 940 |
2SJ50 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 941 |
2SJ55 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK175 |
Hitachi Semiconductor |
| 942 |
2SJ56 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK176 |
Hitachi Semiconductor |
| 943 |
2SK133 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 944 |
2SK134 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 945 |
2SK135 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
| 946 |
2SK1529 |
Field Effect Transistor Silicon N Channel MOS Type High Power Amplifier Application |
TOSHIBA |
| 947 |
2SK1530 |
Field Effect Transistor Silicon N Channel MOS Type High Power Amplifier Application |
TOSHIBA |
| 948 |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification |
Panasonic |
| 949 |
2SK2013 |
Field Effect Transistor Silicon N Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
| 950 |
2SK2162 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION |
TOSHIBA |
| 951 |
2SK2467 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION |
TOSHIBA |
| 952 |
2SK2467-Y |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 953 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
| 954 |
2SK2795 |
Silicon N Channel MOS FET UHF Power Amplifier |
Hitachi Semiconductor |
| 955 |
2SK2922 |
Silicon N Channel MOS FET UHF Power Amplifier |
Hitachi Semiconductor |
| 956 |
2SK3074 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF-BAND POWER AMPLIFIER |
TOSHIBA |
| 957 |
2SK3075 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF .BAND POWER AMPLIFIER |
TOSHIBA |
| 958 |
2SK3391JX |
Silicon N-Channel MOS FET UHF Power Amplifier |
Renesas |
| 959 |
2SK410 |
Silicon N-Channel MOS FET (HF/VHF power amplifier) |
Hitachi Semiconductor |
| 960 |
2SK511 |
HIGH FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
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