| No. |
Part Name |
Description |
Manufacturer |
| 841 |
BCY59-8 |
Trans GP BJT NPN 45V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 842 |
BCY59-I |
Trans GP BJT NPN 45V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 843 |
BCY59-IX |
Trans GP BJT NPN 45V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 844 |
BCY59-VII |
Trans GP BJT NPN 45V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 845 |
BCY59-VIII |
Trans GP BJT NPN 45V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 846 |
BCY59-X |
Trans GP BJT NPN 45V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 847 |
BCY59A |
Trans GP BJT NPN 45V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 848 |
BCY59B |
Trans GP BJT NPN 45V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 849 |
BCY59C |
Trans GP BJT NPN 45V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 850 |
BCY59D |
Trans GP BJT NPN 45V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 851 |
BCY59M |
Trans GP BJT NPN 45V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 852 |
BCY59X |
Trans GP BJT NPN 45V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 853 |
BCY72 |
Trans GP BJT PNP 25V 0.2A 3-Pin TO-18 |
New Jersey Semiconductor |
| 854 |
BD115 |
0.875W High Voltage NPN Metal Can Transistor. 180V Vceo, 0.200A Ic, 22 hFE. |
Continental Device India Limited |
| 855 |
BF173 |
0.200W General Purpose NPN Metal Can Transistor. 25V Vceo, 0.030A Ic, 15 hFE. |
Continental Device India Limited |
| 856 |
BF820 |
0.250W High Voltage NPN SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF821 |
Continental Device India Limited |
| 857 |
BF821 |
0.250W High Voltage PNP SMD Transistor. V Vceo, 0.050A Ic, 50 hFE. Complementary BF820 |
Continental Device India Limited |
| 858 |
BF822 |
0.250W High Voltage NPN SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF823 |
Continental Device India Limited |
| 859 |
BF823 |
0.250W High Voltage PNP SMD Transistor. 250V Vceo, 0.050A Ic, 50 hFE. Complementary BF822 |
Continental Device India Limited |
| 860 |
BF840 |
0.250W General Purpose NPN SMD Transistor. 40V Vceo, 0.025A Ic, hFE. |
Continental Device India Limited |
| 861 |
BF841 |
0.250W General Purpose NPN SMD Transistor. 40V Vceo, 0.025A Ic, hFE. |
Continental Device India Limited |
| 862 |
BFP180 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 863 |
BFP180W |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 864 |
BFQ54 |
Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 |
New Jersey Semiconductor |
| 865 |
BFQ591 |
Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 |
New Jersey Semiconductor |
| 866 |
BFR180 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 867 |
BFR180W |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 868 |
BFY180 |
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) |
Siemens |
| 869 |
BGA7024 |
400 MHz to 2700 MHz 0.25 W high linearity Si amplifier |
NXP Semiconductors |
| 870 |
BGA7124 |
400 MHz to 2700 MHz 0.25 W high linearity silicon amplifier |
NXP Semiconductors |
| | | |
